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The Photoemission from Superlattices of III-V Semiconductors with Graded Interfaces Under Quantizing Magnetic Field

  • Kamakhya P. Ghatak (a1) and Badal De (a2)

Abstract

In this paper we have studied the photoemission from super-lattices of III-V semiconductors under magnetic quantization by formulating a new dispersion law. It is found, taking InAs/GaSb super-lattice with graded interfaces as an example that the photoemission, increases with increasing electron concentration in an oscillatory way and increases with decreasing magnetic field in the magnetic quantum limit. Besides, the photoemission in superlattices is much greater than that of the constituent materials and the well-known results for wide-gap materials have also been obtained from our generalized analysis. In addition, the theoretical analysis is in agreement with the experimental datas as given elsewhere.

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1. Mitra, B. and Ghatak, K.P., Phys. Letts. 142A, 401 (1989).
2. Ghatak, K.P. and Biswas, S.N., J. Appl. Phys. 70, 4309 (1991).
3. Ghatak, K.P. and Mitra, B., Internat. Jour. Electronics, 72, 541 (1992).
4. Ghatak, K.P. and Mitra, B., Physica Scripta 46, 182 (1992).
5. Mitra, B. and Ghatak, K.P., Physica Scripta 40, 776 (1989).
6. Tsidilkovskii, I.M. and Kakanov, A.D., J. Exp. Theo. Phys. 125, 205 (1992).

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The Photoemission from Superlattices of III-V Semiconductors with Graded Interfaces Under Quantizing Magnetic Field

  • Kamakhya P. Ghatak (a1) and Badal De (a2)

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