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Photoelectric Properties of PbTiO3/Si Heterostructures

  • M. Alexe (a1), L. Pintilie (a1), I. Pintilie (a1), A. Pignolet (a2), S. Senz (a2) and D. Hesse (a2)...

Abstract

Photoelectric properties of PbTiO3/Si heterostructures were investigated over a broad range of wavelengths. The spectral distribution of the a.c. open-circuit voltage was measured for wavelengths ranging from 0.35 μm to 4 μm. Two local peaks are observed at 0.38 μm and 0.9 μm which can be attributed to band-to-band excitations in PbTiO3 and Si respectively. The shape of the a.c. signal depends both on the light intensity and on the wavelength. When the heterojunction is reverse-biased, a d.c. photocurrent was observed which has a similar spectral distribution as the a.c. open-circuit voltage.

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