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Photoelastic Waveguides In Sige/Si Heterostructures And Bulk Si

  • E. Lea (a1), B. L. Weiss (a1), H. Rho (a2) and H. E. Jackson (a2)

Abstract

Photoelastic waveguides in bulk Si and SiGe/Si heterostructures have been modelled and characterised. The calculated transverse strain profiles of photoelastic waveguide structures in SiGe/Si heterostructures and bulk silicon are in good agreement with those obtained by microRaman experiments. The waveguide characteristics are also found to be in good agreement with those obtained from the strain modelling and demonstrate that low loss waveguides can be fabricated using these structures

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