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Photodetectors Fabricated from Strain-free GaAs Coupled Quantum Dots

  • Jiang Wu (a1), Dali Shao (a2), Omar Manasreh (a3), Alvason Zhenhua Li (a4), Zhiming M Wang (a5) and Gregory J. Salamo (a6)...

Abstract

In this article, an alternative strain-free growth mode is presented where GaAs coupled-quantum dots are grown on lattice matched AlGaAs. The coupled quantum dots were grown at 550 °C in a molecular beam epitaxy system. The GaAs quantum dots were characterized by using a photoluminescence technique and an atomic force microscope. The photodetector was fabricated into normal incident configuration and photoconductivity spectra were measured covering the mid-infrared spectrum of 2.0 – 8.0 micron (intersubband transitions) and the visible-near-infrared spectrum of 0.5 – 0.9 micron (interband or exciton transitions). The photoresponse spectra in mid-infrared spectral range were found to exist at temperatures lower than 80 K, while the photoresponse spectra in the visible-near-infrared range were observed at temperatures as high as 300 K.

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Keywords

Photodetectors Fabricated from Strain-free GaAs Coupled Quantum Dots

  • Jiang Wu (a1), Dali Shao (a2), Omar Manasreh (a3), Alvason Zhenhua Li (a4), Zhiming M Wang (a5) and Gregory J. Salamo (a6)...

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