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Photodetector Arrays in Laser-Recrystallized Silicon Integrated with an Optical Waveguide

Published online by Cambridge University Press:  25 February 2011

R.W. Wu
Affiliation:
Solid State Electronics Laboratory, Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, Ohio 45221-0030
H.A. Timlin
Affiliation:
Solid State Electronics Laboratory, Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, Ohio 45221-0030
H.E. Jackson
Affiliation:
Department of Physics, University of Cincinnati, Cincinnati, Ohio 452210011
J.T. Boyd
Affiliation:
Solid State Electronics Laboratory, Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, Ohio 45221-0030
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Abstract

Integrated detection of light propagating in an optical waveguide by a photodetector array fabricated directly on the waveguide surface is demonstrated. Laser recrystallization of LPCVD polysilicon patterned with periodically-spaced anti-reflection stripes is utilized. Lateral p-i-n photodiode elements formed by ion implantation are characterized by reverse leakage currents of < 10−11 amp and a typical breakdown voltage of 50 volts. Optical response is found to be linear over a dynamic range of greater than 55 dB.

Type
Research Article
Copyright
Copyright © Materials Research Society 1985

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References

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