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Photocurrent measurements of MgxZn1-xO epitaxial layers of different x

Published online by Cambridge University Press:  31 January 2011

Richard K. Thöt ,
Thomas Sander ,
Peter J. Klar  and
Bruno Meyer
Richard K. Thöt
Affiliation:
Richard.K.Thoet@physik.uni-giessen.de, Justus-Liebig-Universität, I. Physikalisches Institut, Giessen, Germany
Thomas Sander
Affiliation:
Thomas.Sander@physik.uni-giessen.de, Justus-Liebig-Universität, I. Physikalisches Institut, Giessen, Germany
Peter J. Klar
Affiliation:
Peter.J.Klar@exp1.physik.uni-giessen.de, Justus-Liebig-Universität, I. Physikalisches Institut, Giessen, Germany
Bruno Meyer
Affiliation:
Bruno.K.Meyer@exp1.physik.uni-giessen.de, Justus-Liebig-Universität, I. Physikalisches Institut, Giessen, Germany
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Abstract

The MgxZn1-xO alloy in wurtzite structure can be grown with Mg contents x up to 0.4. The band gap of the alloy increases with x. Furthermore, ZnO/MgxZn1-xO quantum well structures are of type I and thus are of interest for the active region of opto-electronic devices.

We report on in-plane photocurrent measurements of MgxZn1-xO epitaxial layers with x up to about 0.4 in the temperature range from 80 K to 300 K. Epitaxial films are either grown by plasma-assisted molecular beam epitaxy on c-plane sapphire substrates with a thin MgZnO buffer layer and by chemical vapor deposition on a-plane ZnO substrates. We map the evolution of the band gap transitions as a function of the Mg composition at different temperatures for the c-plane samples and as a function of polarization of the incoming light for an a-plane sample. The contributions of A, B and C interband transitions to the band gap signals are analysed and discussed.

Keywords

alloymolecular beam epitaxy (MBE)photoconductivity
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1201: Symposium H – Zinc Oxide and Related Materials-2009 , 2009 , 1201-H10-33
Copyright
Copyright © Materials Research Society 2010

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References

1 Ohtomo, A., Kawasaki, M., Koida, T., Masubuchi, K., Sakurai, Y., Yoshida, Y., Yasuda, T., Segawa, Y., and Koinuma, H., Appl. Phys. Lett. 72, 2466 (1998)10.1063/1.121384Google Scholar
2 Muthukumar, S., Zhong, J., Chen, Y., Siegrist, T., and Lu, Y., Appl. Phys. Lett. 82, 742 (2003)10.1063/1.1541950Google Scholar
3 Ohtomo, A., Kawasaki, M., Ohkubo, I., Koinuma, H., Yasuda, T., and Segawa, Y., Appl. Phys. Lett. 75, 980 (1999)10.1063/1.124573Google Scholar
4 Tampo, H., Shibata, H., Matsubara, K., Yamada, A., Fons, P., Niki, S., Yamagata, M., and Kanie, H., Appl. Phys. Lett. 89, 132113 (2006)10.1063/1.2357588Google Scholar
5 Diebold, U., Koplitz, L. Vogel, and Dulub, O., Appl. Surf. Sci. 237, 336 (2004)10.1016/S0169-4332(04)00985-7Google Scholar
6 Du, M., Zhang, S. B., Northrup, J. E., and Erwin, S. C., Phys. Rev. B, 78, 155424 (2008)10.1103/PhysRevB.78.155424Google Scholar
7 Kao, C.J., Kwon, Y.W., Heo, Y.W., Norton, D.P., Ren, F., Chi, G.C., and Pearton, S.J., J. Vac Sci. Technol. B 23, 1024 (2005)10.1116/1.1924613Google Scholar
8 Sasa, S., Ozaki, M., Koike, K., Yano, M., and Inoue, M., Appl. Phys. Lett. 89, 053502 (2006)10.1063/1.2261336Google Scholar
9 Koike, K., Takagi, D., Kawasaki, M., Hashimoto, T., and Inoue, T., Jpn J. Appl. Phys. 46, L865 (2007)10.1143/JJAP.46.L865Google Scholar
10 Wassner, T.A., Laumer, B., Maier, S., Laufer, A., Meyer, B.K., Stutzmann, M., and Eickhoff, M., J. Appl. Phys. 105, 023505 (2009)10.1063/1.3065535Google Scholar
11 Graubner, S., Neumann, C., Volbers, N., Meyer, B. K., Bläsing, J., and Krost, A., Appl. Phys. Lett. 90, 042103 (2007)10.1063/1.2434170Google Scholar
12 Schleife, A., Rödl, C., Fuchs, F., Furthmüller, J., and Bechstedt, F., Appl. Phys. Lett. 91, 241915 (2007)10.1063/1.2825277Google Scholar
13 Gubarev, S.I., phys. stat. sol. (b) 134, 211 (1986)10.1002/pssb.2221340126Google Scholar