Skip to main content Accessibility help
×
Home

Photoconductivity Transient Response from the Steady State in Amorphous Semiconductors

  • C. Main (a1), S. Reynolds (a1), J.- H. Zollondz (a1) and R. Bruggemann (a2)

Abstract

We present analysis, computer modelling and experimental measurements of the photoconductive decay which occurs on cessation of illumination, in amorphous semiconductors. We explore the processes of relaxation of the excess carrier distributions, and examine the relative rôles of re-trapping and recombination in a model case of an exponential trapping state profile, with monomolecular recombination. A variety of possible decay behaviour is revealed. We examine several plausible intuitive explanations of the decay process, including (a) the assumption that the rate limiting step in the decay process is the thermal release of trapped carriers from the vicinity of the quasi - Fermi level, and (b) multiple re-trapping at the quasi -Fermi level prior to recombination. Actual decay rates, however are often much faster than that predicted by these assumptions, and the generation rate dependencies do not follow the relation expected. These explanations are shown in detail to be largely erroneous. Results of experimental measurements of the decay from steady state and TPC in films of a-Si1-xCx:H are presented. While these appear initially to be at variance with the predictions of the present work, we demonstrate that the observations can be reconciled fully with theory.

Copyright

References

Hide All
[1] Adriaenssens, G.J., Baranovskii, S.D., Fuhs, W., Jansen, J. and Öktti, Ö., Phys. Rev B111, 9661, 1995.
[2] Brtiggemann, R., Solid State Comms. L10, 199, 1997.
[3] Cordes, H., Bauer, G.H. and Brtiggemann, R., Phys. Rev. B58, 16160, 1998.
[4] Popovic, P., Bassanese, E., Smole, F., Furlan, J., Grebner, S. and Schwarz, R., J.Appl. Phys. 82, 4504, 1997.
[5] Ryvkin, S.M., Photoelectric Effects in Semiconductors (Consultants Bureau New York 1964), ch6.
[6] Rose, A., RCA Rev. 12, 362, 1951.
[7] Main, C., Berkin, J. and Merazga, A., in New Physical Problems in Electronic Materials, ed Borissov, M., Kirov, N., Marshall, J.M., and Vavrek, A., (World Scientific Press, Singapore, 1991) pp 5586.
[8] Main, C., in Amorphous and Microcrystalline Silicon Technology-1997, ed. Hack, M., Schiff, E.A., Wagner, S., Matsuda, A. and Schropp, R., MRS Symp. Proc., Vol 467, (MRS, Pittsburgh 1997) Ch.143, pp.167178.

Photoconductivity Transient Response from the Steady State in Amorphous Semiconductors

  • C. Main (a1), S. Reynolds (a1), J.- H. Zollondz (a1) and R. Bruggemann (a2)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed