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The Photoconductivity Exponent For Recombination At Dangling Bonds In a-Si:H

Published online by Cambridge University Press:  28 February 2011

F. Vaillant  and
D. Jousse
F. Vaillant
Affiliation:
Centre National de la Recherche Scientifique, Laboratoire d'Etudes des Propriétés Electroniques des Solides, associated with ‘Université Scientifique, Technologique et Médicale de Grenoble’, B.P. 166, 38042 Grenoble Cedex, France
D. Jousse
Affiliation:
Centre National de la Recherche Scientifique, Laboratoire d'Etudes des Propriétés Electroniques des Solides, associated with ‘Université Scientifique, Technologique et Médicale de Grenoble’, B.P. 166, 38042 Grenoble Cedex, France
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Abstract

A theoretical model has been developed for recombination at dangling bonds which explains the γ variations between 0.5 and 1 depending on the Fermi level position. The occupation probabilities of the T3+, T3° and T3- states under illumination have been calculated using the statistics of correlated levels. The γ exponent is derived through a parametric representation of the equations of detailed balance and charge conservation. A good agreement with experiment is obtained with a dangling bond density of 5×1015 cm-3, a placing of the T3° level at 0.95 eV below Ec, an effective correlation energy of 0.4 eV and a charged to neutral capture cross section ratio of 50.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 143
Copyright
Copyright © Materials Research Society 1986

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References

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