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Photoconductivity Dependence on the Background Oxygen Pressure in Nanostructured ZnO UV Sensor

Published online by Cambridge University Press:  31 January 2011

Nilima V Hullavarad  and
Shiva S Hullavarad
Nilima V Hullavarad
Affiliation:
ffnvh@uaf.edu, UNIVERSITY OF ALASKA FAIRBANKS, OFFICE OF ELECTRONIC MINIATURIZATION, FAIRBANKS, Alaska, United States
Shiva S Hullavarad
Affiliation:
fnssh1@uaf.edushiva.h@alaska.edu, UNIVERSITY OF ALASKA FAIRBANKS, OFFICE OF ELECTRONIC MINIATURIZATION, FAIRBANKS, Alaska, United States
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Abstract

The present work describes the photoconductivity dependence on ZnO nanostructure UV sensor. ZnO nanostructures were synthesized by direct vapor phase (DVP) technique. ZnO nanowires are of dimensions 30-65 nm in diameter and 5 μm in length. The role of oxygen in deciding the opto-electronic properties of nanostructured ZnO UV sensors was studied.

Keywords

optoelectronicII-VIsensor
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1178: Symposium AA – Semiconductor Nanowires–Growth, Size-Dependant Properties and Applications , 2009 , 1178-AA09-28
Copyright
Copyright © Materials Research Society 2009

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References

REFERENCES

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