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Photoconductivity and Carrier Transport in Porous Silicon

  • M. J. Heben (a1) and Y. S. Tsuo (a1)

Abstract

We present results from our investigations of the transport properties of p-type Si/porous silicon/Au devices. Current-voltage measurements were performed as a function of temperature from room temperature down to 23K and indicate that a tunneling mechanism governs the transport properties of these devices. Photocurrent spectroscopy measurements were performed as a function of temperature and excitation wavelength and support the conclusion that a tunneling mechanism is operative in these devices. The external quantum efficiencies of our porous-silicon-based structures can be greater than 20%, and the shape of the photocurrent spectra of porous-silicon-based devices, when compared to that of a p-type Si/Au diode, suggests that carriers photogenerated within porous silicon can be collected in an external circuit.

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Photoconductivity and Carrier Transport in Porous Silicon

  • M. J. Heben (a1) and Y. S. Tsuo (a1)

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