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Photochemical Pattern Etching of Single-Crystalline 3C-SiC

Published online by Cambridge University Press:  10 February 2011

T. Mori ,
K. Hatao  and
M. Murahara
T. Mori
Affiliation:
Faculty of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa, 259–12, JAPAN
K. Hatao
Affiliation:
Faculty of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa, 259–12, JAPAN
M. Murahara
Affiliation:
Faculty of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa, 259–12, JAPAN
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Abstract

A single-crystalline 3C-SiC is very difficult to etch compared with a polycrystalline SiC. Thus, a photochemical pattern etching of the SiC was demonstrated by using Xe2* excimer lamp and ArF or KrF excimer laser. To promote the surface reaction, a Xe2* excimer lamp was employed to produce many radicals on the sample surface; simultaneously, ArF or KrF laser light irradiated the surface via a circuit pattern to dissociate the Si-C bonds. The Si and C reacted with the F and N radicals photo-dissociated from NF3 gas to form SiF4, CFn and CN, which diffused in the reaction cell. As a result, the single-crystalline 3C-SiC was photo-chemically etched effectively. With the NF3 gas of 200Torr, the Xe2* excimer lamp of 7mW/cm2, and the KrF excimer laser of 650mJ/cm2, 20Hz and 10,000shots, the etch depth of 700 Å was successfully achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 495: Symposium W – Chemical Aspects of Electronic Ceramics Processing , 1997 , 407
Copyright
Copyright © Materials Research Society 1998

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