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Photo-Chemical Changes of Aluminium Films on Silicon

  • A. J. Kellock (a1), J. S. Williams (a1), G. L. Nyberg (a2) and J. Liesegang (a2)


X-ray Photoelectron Spectroscopy and Rutherford Backscattering Spectroscopy with channeling are employed to study surface and interface changes resulting from irradiation of thin Al films on Si-SiO2 substrates using < 6eV visible photons. Results indicati that surface oxidation and bonding rearrangements at the Al-SiO2-Si interface can take place at room temperature under photon bombardment. These changes are correlated with enhanced adhesion and modification of film etch properties which are also a result of photon irradiation.



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Photo-Chemical Changes of Aluminium Films on Silicon

  • A. J. Kellock (a1), J. S. Williams (a1), G. L. Nyberg (a2) and J. Liesegang (a2)


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