Hostname: page-component-848d4c4894-r5zm4 Total loading time: 0 Render date: 2024-06-20T07:36:47.784Z Has data issue: false hasContentIssue false
  • English
  • Français

A Photocapture Test of DX-Center Models

Published online by Cambridge University Press:  25 February 2011

Harold P. Hjalmarson ,
S. R. Kurtz  and
T. M. Brennan
Harold P. Hjalmarson
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185.
S. R. Kurtz
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185.
T. M. Brennan
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185.
Get access

Abstract

The DX-center model is widely used to explain data for the persistent photoconductivity (PPC) effect. An analysis of the DX-center model suggests a new experiment to test its correctness. In this experiment, photons near the threshold energy of the photoionization cross-section for the DX-center induce transitions from the partially occupied conduction band to empty DX-centers. This mechanism, which we call photocapture, competes with the usual photoionization which empties the DX-centers. The photocapture cross-section is estimated and an experimental attempt is made to detect photocapture. The significance of the null result is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 773
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Nelson, R. J., J. App. Phys. 31, 351 (1977).Google Scholar
2 Drummond, T. J., Kopp, W., Thorne, R. E., and Cho, A. Y., J. Appl. Phys . 20, L913 (1981).Google Scholar
3 Lang, D. V. and Logan, R. A., Phys. Rev. Lett. 39, 635 (1977).Google Scholar
4 Lang, D. V., Logan, R. A., and Jaros, M., Phys. Rev. B 19, 1015 (1979).Google Scholar
5 Mizuta, M., Tachikawa, M., Kukimota, H., and Minorua, S., Japan J. Appl . Phys. 24, L143 (1985).Google Scholar
6 Oshiyama, A. and Ohnishi, S., Phys. Rev. B 33. 5320 (1986).Google Scholar
7 Morgan, T. N., Phys. Rev. B 34, 2664 (1986).Google Scholar
8 Hjalmarson, H. P. and Drummond, T. J., Appl. Phys. Lett. 60, 2410 (1986).Google Scholar
9 Henning, J. C. M. and Ansems, J. P. M., Semicond. Sci. Technol. 2, 1 (1987).Google Scholar
10 Mooney, P. M., Northrop, G. A., Morgan, T. N., and Grimmeiss, H. G., Phys. Rev. B 37, 8298 (1988).Google Scholar
11 Chadi, D. J. and Chang, K. J., Phys. Rev. Lett. 61, 873 (1988).Google Scholar
12 Khacaturyan, K., Weber, E. R., and Kaminska, M., unpublished.Google Scholar
13 Lucovsky, G., Solid State Commun. 3, 299 (1965).Google Scholar
14 Hjalmarson, H. P. and Drummond, T. J., Materials Science Forum, 38–41 1091 (1989)Google Scholar
15 Nathan, M. I., Jackson, T. N., Kirchner, P. D., Mendez, E. E., Pettit, G. D., and Woodall, J. M., J. Electron. Mater. 12, 719 (1983).Google Scholar
16 He, L. X., Martin, K. P., and Higgins, R. J., Phys. Rev. B 39, 1808 (1989).Google Scholar