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Photo Induced Deposition of Thin Silicon Dioxide Films Using a Novel Large Area Excimer Lamp

Published online by Cambridge University Press:  28 February 2011

P. Patel ,
U. Kogelschatz ,
P. Bergonzo  and
I. W. Boyd
P. Patel
Affiliation:
Electrical & Electronic Engineering, University College London, Torrington Place, London WC1 E7JE, UK
U. Kogelschatz
Affiliation:
Asea Brown Boveri Corporate Research, 5405 Baden, Switzerland
P. Bergonzo
Affiliation:
Electrical & Electronic Engineering, University College London, Torrington Place, London WC1 E7JE, UK
I. W. Boyd
Affiliation:
Electrical & Electronic Engineering, University College London, Torrington Place, London WC1 E7JE, UK
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Abstract

There is a growing interest in the deposition and processing of thin films at low temperatures to eliminate the inherent problems associated with high temperature processing. Photo enhanced processing is one of the techniques which has received considerable interest. One of the major limitations of photo processing is the lack of sufficiently intense ultra-violet (UV) sources. To date the low pressure Hg lamp has been the only available source for large area UV processing and this has limited the types and quality of films deposited.

In this paper we will outline the design of a novel, variable wavelength excimer discharge lamp which can be used for depositing thin films over large substrate areas. We shall also discuss the direct (i.e. without intermediate photosensitisation reactions) photo induced deposition of thin silicon dioxide films using SiH4 and N2O which are photo dissociated by 126nm photons generated by the excimer lamp described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 224: Symposium F – Rapid Thermal and Integrated Processing I , 1991 , 299
Copyright
Copyright © Materials Research Society 1991

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