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Photo and Thermal Stability of Chlorine Doped Amorphous Silicon TFTs

Published online by Cambridge University Press:  10 February 2011

J. H. Kim ,
J. H. Choi ,
C. W. Kim  and
J. H. Souk
J. H. Kim
Affiliation:
R&D Group II, AMLCD Division, Semiconductor Business, SAMSUNG Electronics Co., Ltd., 449–900, San #24 Nongseo-Ri, Kiheung-Eup, Yongin-Ciry, Kyungki-Do, KOREA
J. H. Choi
Affiliation:
R&D Group II, AMLCD Division, Semiconductor Business, SAMSUNG Electronics Co., Ltd., 449–900, San #24 Nongseo-Ri, Kiheung-Eup, Yongin-Ciry, Kyungki-Do, KOREA
C. W. Kim
Affiliation:
R&D Group II, AMLCD Division, Semiconductor Business, SAMSUNG Electronics Co., Ltd., 449–900, San #24 Nongseo-Ri, Kiheung-Eup, Yongin-Ciry, Kyungki-Do, KOREA
J. H. Souk
Affiliation:
R&D Group II, AMLCD Division, Semiconductor Business, SAMSUNG Electronics Co., Ltd., 449–900, San #24 Nongseo-Ri, Kiheung-Eup, Yongin-Ciry, Kyungki-Do, KOREA
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Abstract

The Cl doped amorphous silicon film was deposited from SiH4, SiH2C12 and H2 gas mixture by PECVD process and their properties with various SiH2C12 flow rate is discussed. Controlling the amount of Cl doped was crucial for acquiring high stability TFT without lowering on current. Amorphous silicon and Cl doped amorphous silicon double layer TFT structure, with satisfactory on current and throughput, proved to be more stable than conventional amorphous silicon TFT in photo state and in elevated temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 471: Symposium G – Flat Panel Display Materials III , 1997 , 161
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Hirabashi, I., Morigaki, K. and Nitta, S., Jpn. J. Appl. Phys. 19 (1980) L387 Google Scholar
2. Dersch, H., Stuke, J. and Beichler, J., Appl. Phys. Lett. 38 (1980) 456 Google Scholar
3. Yang, L. H., Fong, C. Y. and Nichols, C. S., Mat. Res. Soc. Symp. 118 (1988) 513 Google Scholar
4. Hanazawa, Y., Inada, K., Dohjo, M., Hirota, S. and Higuchi, T., Asia Displays '95, 103 Google Scholar
5. Byun, J. S., Jeon, H. B., Lee, K. H. and Jang, J., Appl. Phys. Lett. 67 (1995) 3786 Google Scholar
6. Osbome, I. S., Hata, N. and Matsuda, A., Appl. Phys. Lett. 66 (1995) 965 Google Scholar
7. Private conversation with J. JangGoogle Scholar
8. Osbome, I. S., Hata, N. and Matsuda, A., Jpn. J. Appl. Phys. 34 (1995) L159 Google Scholar
9. Powell, M. J., Appl. Phys. Lett. 43 (1983) 597 Google Scholar
10. Powell, M. J., van Berkel, C., French, I. D. and Nicholls, D. H., Appl. Phys. Lett. 51 (1987) 965 Google Scholar
11. Jackson, W. B., Marshall, J. M. and Moyer, M. D., Phys. Rev. B, 39 (1989) 1164 Google Scholar
12. Nickel, N., Fuhs, W. and Mell, H., Phil. Mag. B, 61 (1990) 251 Google Scholar