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Photo and Electroluminescence of a-Si:Er:H

Published online by Cambridge University Press:  10 February 2011

Leandro R. Tessler  and
Ana Carola Iñiguez
Leandro R. Tessler
Affiliation:
Instituto de Fisica “Gleb Wataghin”, UNICAMP, C. P. 6165, 13083-970 Campinas, SP, Brazil, tessler@ifi.unicamp.br
Ana Carola Iñiguez
Affiliation:
Instituto de Fisica “Gleb Wataghin”, UNICAMP, C. P. 6165, 13083-970 Campinas, SP, Brazil
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Abstract

Trivalent erbium (Er3+) presents a characteristic intra 4f optical transition 4I13/2 → 4I15/2 at 1.54 μm when incorporated in several solid hosts. Hydrogenated amorphous silicon (a-Si:H) is a good candidate as a host for applications in optical communications and photonic integration. We have studied Er3+ photo and electroluminescence in a-Si:H prepared by co-sputtering from a silicon target partially covered with metallic erbium chunks. Since the presence of oxygen impurities enhances the luminescence intensity, we studied the influence of oxygen added to the sputtering gas on the material properties. We found that oxygen reduces the erbium incorporation into the films. We obtained samples presenting 1.54 μm photoluminescence as deposited for a wide range of erbium concentrations. Maximum room-temperature photoluminescence efficiency is obtained for samples that contain ∼ 1% [O]/[Si] concentrations. The temperature quenching is small, mainly due to the temperature dependence of the luminescence lifetime.

Room temperature electroluminescence at 1.54 νm was observed in reverse biased Si/a-Si:Er:O:H/Al structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 279
Copyright
Copyright © Materials Research Society 1998

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