Skip to main content Accessibility help
×
Home

Phosphorus / Silicon Interstitial Annealing After Ion Implantation

  • P. H. Keys (a1), R. Brindos (a1), V. Krishnamoorthy (a1), M. Puga-Lambers (a1), K. S. Jones (a1) and M. E. Law (a2)...

Abstract

The release of interstitials from extended defects after ion implantation acts as a driving force behind transient enhanced diffusion (TED). Implantation of Si+ ions into regions of phosphorus-doped silicon provides experimental insight into the interaction of silicon interstitials and dopant atoms during primary damage annealing. The presence of phosphorus influences the morphology of secondary defects during initial nucleation. Transmission electron microscopy (TEM) is used to differentiate between defect types and quantify the interstitials trapped in extended defects. This analysis reveals that phosphorus results in a reduction of interstitials trapped in observable extended defects. The interstitial flux released from the implanted region is also affected by the phosphorus doping. This phenomenon is closely studied using secondary ion mass spectrometry (SIMS) to monitor diffusion enhancements of dopant layers. Shifts in diffused dopant profiles are correlated with the different morphologies of the extended defects and the decay of the silicon interstitial supersaturation. This correlation is used to understand the interaction of excess silicon interstitials with phosphorus atoms.

Copyright

References

Hide All
1 Stolk, P. A., Gossmann, H.-J., Eaglesham, D. J., Jacobson, D. C., Luftman, H. S., and Poate, J. M., “Understanding and Controlling Transient Enhanced Dopant Diffusion in Silicon,” Mat. Res. Soc. Symp. Proc. 354, (1995)
2 Packan, P. A. and Plummer, J. D., “Transient diffusion of low-concentration B due to 29Si implantation damage,” Appl. Phys. Lett. 56, 1787 (1990)10.1063/1.103100
3 Haynes, T. E., Eaglesham, D. J., Stolk, P. A., Gossmann, H.-J., Jacobson, D. C., and Poate, J. M., Appl. Phys. Lett. 69, 1376 (1996)10.1063/1.117441
4 Liu, J., Krishnamoorthy, V., Jones, K. S., Law, M. E., Shi, J., and Bennett, J., “Transient Enhanced Diffusion and Defect Studies in B Implanted Si,” IEEE, 626 (1997)
5 Griffin, P. B., Lever, R. F., Huang, R. Y. S., Kennel, H. W., Packan, P. A., and Plummer, J. D., Trans. of Int. Elect. Dev. Meet. 12, 295 (1993)10.1109/IEDM.1993.347349
6 Chao, H. S., Crowder, S. W., Griffin, P. B., and Plummer, J. D., J. Appl. Phys. 79, 2352 (1996)10.1063/1.361162
7 Raman, R., Law, M. E., Krishnamoorthy, V., and Jones, K. S., Appl. Phys. Lett. 74, 700 (1999)10.1063/1.122992

Related content

Powered by UNSILO

Phosphorus / Silicon Interstitial Annealing After Ion Implantation

  • P. H. Keys (a1), R. Brindos (a1), V. Krishnamoorthy (a1), M. Puga-Lambers (a1), K. S. Jones (a1) and M. E. Law (a2)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.