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Phosphorus Glass Doping of Polycrystalline Silicon During Rapid Thermal Annealing

Published online by Cambridge University Press:  28 February 2011

Bouchaib Hartiti ,
Abdelilah Slaoui ,
Roland Stuck ,
Jean-Claude Muller  and
Paul Siffert
Bouchaib Hartiti
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS n°292), BP 20, F-67037 Strasbourg Cedex 2, France
Abdelilah Slaoui
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS n°292), BP 20, F-67037 Strasbourg Cedex 2, France
Roland Stuck
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS n°292), BP 20, F-67037 Strasbourg Cedex 2, France
Jean-Claude Muller
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS n°292), BP 20, F-67037 Strasbourg Cedex 2, France
Paul Siffert
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS n°292), BP 20, F-67037 Strasbourg Cedex 2, France
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Abstract

We show that the use of phosphorus doped spin-on glasses as diffusion source is an attractive approach for the formation of shallow junctions in polycrystalline silicon materials. Moreover, this very simple doping process using a glass film can be fruitfully associated to rapid thermal annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 739
Copyright
Copyright © Materials Research Society 1993

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References

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