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Phosphorus Diffusion From Doped Si1−xGex, Films into Silicon

Published online by Cambridge University Press:  10 February 2011

S. Kobayashi ,
M. Iizuka ,
T. Aoki ,
N. Mikoshiba ,
M. Sakuraba ,
T. Matsuura  and
J. Murota
S. Kobayashi
Affiliation:
Department of Electronic Engineering, Tokyo Institute of Polytechnics, Atsugi 243-0297, JAPAN, koba@ee.t-kougei.ac.jp
M. Iizuka
Affiliation:
Department of Electronic Engineering, Tokyo Institute of Polytechnics, Atsugi 243-0297, JAPAN
T. Aoki
Affiliation:
Department of Electronic Engineering, Tokyo Institute of Polytechnics, Atsugi 243-0297, JAPAN
N. Mikoshiba
Affiliation:
Department of Electronic Engineering, Tokyo Institute of Polytechnics, Atsugi 243-0297, JAPAN
M. Sakuraba
Affiliation:
Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, JAPAN.
T. Matsuura
Affiliation:
Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, JAPAN.
J. Murota
Affiliation:
Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, JAPAN.
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Abstract

Phosphorus diffusion from in-situ doped Si1−xGex epitaxial films into Si at 800°C was investigated using secondary ion mass spectroscopy and differential resistance measurements. The surface P concentration in the diffused layer in Si was higher than the P concentration in the Si1−xGex, film in the present conditions, which signifies the segregation of P from the Si1−xGex, film into Si. The segregation coefficient, defined as the ratio of the active P concentration in the Si to that in the Si1−xGex, film, was about 2.5 in the case of the Si0.75Ge0.25 film as a diffusion source and increased with increasing Ge fraction. The P diffusion profiles in Si were normalized by x/√, even though the segregation of P occurred. The high concentration diffusion characteristics of P in Si were similar to those reported by using conventional diffusion sources.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 568: Symposium S – Silicon Front-End Processing-Physics & Technology of Dopant… , 1999 , 265
Copyright
Copyright © Materials Research Society 1999

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References

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