Skip to main content Accessibility help
×
Home

Phosphorus and Boron Implantation into (100) Germanium

  • Y. S. Suh (a1), M. S. Carroll (a2), R. A. Levy (a1), A. Sahiner (a3) and C. A. King (a4)...

Abstract

Boron and phosphorus were implanted into (100) Ge with energies ranging from 20-320 keV and doses of 5×1013 to 5×1016 cm−2. The as-implanted and annealed dopant profiles were examined using secondary ion mass spectrometry (SIMS) and spreading resistance profiling (SRP). The first four moments were extracted from the as-implanted profile for modeling with Pearson distributions over the entire energy range. The samples were annealed at 400, 600, or 800°C in nitrogen ambient. The dopant activation and diffusion were also examined and it was found that p-type sheet resistances immediately after boron implantation as low as 18 ohms/sq could be obtained without subsequent annealing.

Copyright

References

Hide All
1. Chui, C. O., Kim, H., Chi, D., Triplett, B. B., McIntyre, P. C., and Saraswat, K. C., IEDM Tech. Dig. 437 (2002).
2. Jones, R. E., Thomas, S. G., Bharatan, S., Thoma, R., Jasper, C., Zirkle, T., Edwards, N. V., Liu, R., Wang, X. D., Xie, Q., Rosenblad, C., Ramm, J., Isella, G., Känel, H. von, Oh, J., and Campbell, J. C., IEDM Tech. Dig. 793 (2002).
3. Uppal, S., Willoughby, A. F. W., Bonar, J. M., Evans, A. G. R., Cowern, N. E. B., Morris, R., and Dowsett, M. G., J. Appl. Phys. 90, 4293 (2001).
4. Jones, K. S. and Haller, E. E., J. Appl. Phys. 61, 2469 (1987).
5. Uppal, S., Willoughby, A. F. W., Bonar, J. M., Evans, A. G. R., Cowern, N. E. B., Morris, R., and Dowsett, M. G., Physica B 308–310, 525 (2001).
6. Glazov, V. M. and Zemskov, V. S., Physicochemical Principles of Semiconductor Doping, (Israel Program for Scientific Translations, Jerusalem, 1968), p.119, p.140.
7. Ziegler, J. F., Biersack, J. P. and Littmark, U., The Stopping and Range of Ions in Solids, (Pergamon, New York, 1985).
8. Ashworth, D. G., Oven, R., and Mundin, B., J. Phys. D. 23, 870 (1990).
9. Ahmed, S., Barbero, C. J., Sigmon, T. W., and Erickson, J. W., J. Appl. Phys. 77, 6194 (1995).
10. Winterbon, K. B., Appl. Phys. Lett. 42, 205 (1983).
11. Suh, Y. S., Levy, R. A., Caroll, M. S., King, C. A., and Sahiner, A., “Modeling of boron and phosphorus implantation into (100) germanium,” submitted to J. Appl. Phys. (2004).
12. Sze, S. M. and Irvin, J. C., Solid-State Electron. 11, 599 (1968).
13. Chui, C. O., Gopalakrishnan, K., Griffin, P. B., Plummer, J. D., and Saraswat, K. C., Appl. Phys. Lett. 83, 3275 (2003).
14. Stolk, P. A., Gossmann, H. -J., Eaglesham, D. J., Jacobson, D. C., Rafferty, C. S., Gilmer, G. H., Jaraíz, M., Poate, J. M., Luftman, H. S., and Haynes, T. E., J. Appl. Phys. 81, 6031 (1997).
15. Sze, S. M., VLSI Technology, 2nd ed. (Mcgraw-Hill, New York, 1988), p. 294.
16. Sze, S. M., Physics of Semiconductor Devices, 2nd ed. (Wiley-Interscience, New York, 1981), p. 69.

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed