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Phonons in Mixed II-VI Compound Semiconductors

  • D. N. Talwar (a1), Alan C. Coleman (a1), P. M. Amirtharaj (a2), S. Perkowitz (a3), Z. C. Feng (a3) and P. Becla (a4)...


We have analysed the far infrared reflectivity and Raman scattering spectra of phonons in Cd1−xMnxTe, Zn1−xMnxTe, Hg1−xMnxTe, and Hg1−xZnxTe for low composition of x. Unlike CdMnTe and ZnMnTe, weak impurity induced peaks are observed in HgZnTe and HgMnTe, near ˜ 96 and 98 cm−1, well above the LA-phonon band of HgTe. Comprehensive calculation of lattice dynamics based on a semi-empirical Green's function theory has provided convincing arguments to support the above features as gap modes of Zn and Mn in HgTe. The theory also predicts the possibility of resonance modes, above the TA cutoff of HgTe, in HgMnTe and HgZnTe to be observed by IR spectroscopy.



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