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Phonons and Holes in Magnesium Doped GaN

Published online by Cambridge University Press:  10 February 2011

F. Demangeot ,
J. Frandon ,
M. A. Renucci ,
D. Smirnov ,
J. Létin ,
N. Grandjean ,
B. Beaumont ,
M. Kuball ,
T. Davies  and
J. W Steeds
F. Demangeot
Affiliation:
Laboratoire de Physique des Solides, Université P. Sabatier, 31062 Toulouse Cedex, France
J. Frandon
Affiliation:
Laboratoire de Physique des Solides, Université P. Sabatier, 31062 Toulouse Cedex, France
M. A. Renucci
Affiliation:
Laboratoire de Physique des Solides, Université P. Sabatier, 31062 Toulouse Cedex, France
D. Smirnov
Affiliation:
Laboratoire de Physique de la Matière Condensée, INSA, 31077 - Toulouse Cedex, France
J. Létin
Affiliation:
Laboratoire de Physique de la Matière Condensée, INSA, 31077 - Toulouse Cedex, France
N. Grandjean
Affiliation:
Centre de recherche sur l'Hétero-Epitaxie et ses Applications, CNRS, Sophia Antipolis, 06560 Valbonne, France
B. Beaumont
Affiliation:
Centre de recherche sur l'Hétero-Epitaxie et ses Applications, CNRS, Sophia Antipolis, 06560 Valbonne, France
M. Kuball
Affiliation:
University of Bristol, H.H. Wills Physics Laboratory, Bristol B58 1TL, United Kingdom
T. Davies
Affiliation:
University of Bristol, H.H. Wills Physics Laboratory, Bristol B58 1TL, United Kingdom
J. W Steeds
Affiliation:
University of Bristol, H.H. Wills Physics Laboratory, Bristol B58 1TL, United Kingdom
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Abstract

P doping of gallium nitride by incorporation of magnesium in the layers was controlled recently. Only Popovici et al. [1] have published the results of a Raman study on p type GaN. In the present communication, we report on the interaction of the free hole gas with the axial A1(LO) or planar E1(LO) phonon modes, evidenced by Raman scattering: the observed coupled phononplasmon mode is found very different from the corresponding one evidenced in silicon doped (n type) GaN. We compare the experimental data with the lineshape calculated within a dielectric model, using the results of electrical measurements. These results are also compared with infrared reflectivity spectra.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 333
Copyright
Copyright © Materials Research Society 1998

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References

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