Hostname: page-component-7c8c6479df-995ml Total loading time: 0 Render date: 2024-03-29T15:19:49.949Z Has data issue: false hasContentIssue false

Phonon Spectra Dependence on Growth and Sample Treatment in β-FeSi2

Published online by Cambridge University Press:  03 September 2012

G. Guizzetti
Affiliation:
Dipartimento di Fisica “A.Volta”, Universiti di Pavia, Via Bassi 6, 1-27100 Pavia, Italy
F. Marabelli
Affiliation:
Dipartimento di Fisica “A.Volta”, Universiti di Pavia, Via Bassi 6, 1-27100 Pavia, Italy
M. Patrini
Affiliation:
Dipartimento di Fisica “A.Volta”, Universiti di Pavia, Via Bassi 6, 1-27100 Pavia, Italy
Y. Mo
Affiliation:
Laboratorium für Festkörperphysik, Swiss Federal Institute of Technology (ETH), CH-8093 Zürich, Switzerland
N. Onda
Affiliation:
Laboratorium für Festkörperphysik, Swiss Federal Institute of Technology (ETH), CH-8093 Zürich, Switzerland
H. Von KÄnel
Affiliation:
Laboratorium für Festkörperphysik, Swiss Federal Institute of Technology (ETH), CH-8093 Zürich, Switzerland
Get access

Abstract

Transmittance, reflectance and Raman measurements have been performed from 50 to 700 cm−1 on different thin films of β-FeSi2 epitaxially grown by MBE on Si substrates. Vibrational spectra show much more structures than the five phonons usually observed in this material; the dependence on the crystalline orientation, the thickness, the growth and the annealing temperature has been studied.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Bost, M.C. and Mahan, J.E., J. Appl. Phys. 58, 2696 (1985); ibid. 64, 2034 (1988).CrossRefGoogle Scholar
[2] Dusausoy, Y., Protas, J., Wandji, R. and Roques, B., Acta Cristallogr. B27, 1029 (1971).Google Scholar
[3] Cherief, N., d'Anterroches, C., Cinti, R.C., Nguyen, T.A., and Derrien, J., Appl. Phys. Lett. 55, 1671 (1989).CrossRefGoogle Scholar
[4] Mahan, J.E., Geib, K.M., Robinson, G.Y., Long, R.G., Xinghua, Y., Bai, G., Nicolet, M.A., and Nathan, M., Appl. Phys. Lett. 56, 2126 (1990).CrossRefGoogle Scholar
[5] Lefki, K., Muret, P., Cherief, N., and Cinti, R.C., J. Appl. Phys. 69, 352 (1991).CrossRefGoogle Scholar
[6] Rizzi, A., Moritz, H., and Liith, H., J. Vac. Sci. Technol. A9, 912 (1991).CrossRefGoogle Scholar
[7] Lagomarsino, S., Scarinci, F., Savelli, G., Giannini, C., Castrucci, P., and Grimaldi, M.G., J. Appl. Phys. 71, 1224 (1992).CrossRefGoogle Scholar
[8] Shifer, H. Ch., Rèsen, B., Moritz, H., Rizzi, A., Lengeler, B., and Liith, H., Appl. Phys. Lett. 62, 2271 (1993).CrossRefGoogle Scholar
[9] Sirringhaus, H., Onda, N., Miiller-Gubler, E., Mfiller, P., Stalder, R., and Kiinel, H. von, Phys. Rev. B 47, 10567 (1993).CrossRefGoogle Scholar
[10] Mueller, E., Deller, H.R., Nissen, H.-U. and Kaenel, H. von 26. Kolloquium des Arbeitskreises fuer Elektronenmikroskopische Direkt- abbildung und Analyse von Oberflaechen, Zuerich, 1993 (in press); and references therein.Google Scholar
[11] Birkholz, U., Finkenrath, H., Naegele, J., and Uhle, N., Phys. Stat. Sol. 30, K81 (1968).CrossRefGoogle Scholar
[12] Lefki, K., Muret, P., Bustarret, E., Boutarek, N., Madar, R., Chevrier, J., Derrien, J., and Brunel, M., Sol. State Commun. 80, 791 (1991).CrossRefGoogle Scholar
[13] Borghesi, A., Piaggi, A., Stella, A., Guizzetti, G., Nava, F., and Santoro, G., Proc. 20th ICPS, ed. by Anastassakis, E.M. and Joannopoulos, J.D. (Word Sci., Singapore, 1991) p. 2001.Google Scholar
[14] Kotini, S., Siapkas, D.I., and Dimitriadis, C.A., Proc. 20th ICPS, ed. by Anastassakis, E.M. and Joannopoulos, J.D. (Word Sci., Singapore, 1991) p. 316.Google Scholar
[15] Henrion, W., Lange, H., Jahne, E. and Giehler, M., Appl. Surf. Sci. 70/71, 569 (1993).CrossRefGoogle Scholar
[16] Marabelli, F., Amiotti, M., Bellani, V., Guizzetti, G., Borghesi, A., Lagomarsino, S., and Scarinci, F., Proc. 21st ICPS, ed. by Jiang, P. and Zheng, H.Z. (World Sci., Singapore, 1992) p. 209.Google Scholar