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Phase Transition and Dielectric Tunability of Chemical Solution Deposited (Pb0.35Sr0.65)(Zr0.5Ti0.5)O3 Thin Films on Pt/ZrO2/SiO2/Si Substrates

  • Naba K Karan (a1), Marilin Perez (a2), Jose Saavedra (a3), Dillip K Pradhan (a4), Reji Thomas (a5) and Ram S Katiyar (a6)...

Abstract

(Pb0.35Sr0.65)(Zr0.5Ti0.5)O3 thin films were grown on Pt/ZrO2/SiO2/Si substrates by chemical solution deposition. As-deposited (pyrolysed at 500°C) films were amorphous and single phase films were obtained at temperature as low as 550°C with a 30 nm SrTiO3 seed layer. Dielectric constant and loss tangent at room temperature were 210 and 0.022, respectively at 100 kHz for the film annealed at 700°C. Frequency dispersion of the dielectric properties was low. The phase transition temperature (ferroelectric to paraelectric) was well below the room temperature and was around 220 K. The room temperature tunability and the k-factor at 500 kV/cm was around 45% and 16, respectively.

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Keywords

Phase Transition and Dielectric Tunability of Chemical Solution Deposited (Pb0.35Sr0.65)(Zr0.5Ti0.5)O3 Thin Films on Pt/ZrO2/SiO2/Si Substrates

  • Naba K Karan (a1), Marilin Perez (a2), Jose Saavedra (a3), Dillip K Pradhan (a4), Reji Thomas (a5) and Ram S Katiyar (a6)...

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