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Phase Transformations in a-Si/Ni/C-Si Structures with Different Interfacial Ni Layer Thicknesses

  • A.Yu. Kuznetsov (a1), I. I. Khodos (a1), J. Linnros (a2), B. Mohadjeri (a2), E. V. Monakhov (a3) and B. G. Svensson (a2)...

Abstract

Planar low-temperature solid phase epitaxy of amorphous silicon in a-Si/10nmNiSi/c-Si structure was observed. The crystallization rate is well described by the arrhenius-type expression with the activation energy and preexponencial factor deduced from our measurements of 1.7 eV and 2.4×1012 nm/min, respectively. NiSi2 formation at the NiSi2/a-Si interface is believed to be the limiting stage of the transformation. The structures with thicker Ni-reached interfacial layer perform much poorer a-Si epitaxy.

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Phase Transformations in a-Si/Ni/C-Si Structures with Different Interfacial Ni Layer Thicknesses

  • A.Yu. Kuznetsov (a1), I. I. Khodos (a1), J. Linnros (a2), B. Mohadjeri (a2), E. V. Monakhov (a3) and B. G. Svensson (a2)...

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