Hostname: page-component-8448b6f56d-jr42d Total loading time: 0 Render date: 2024-04-18T02:20:45.742Z Has data issue: false hasContentIssue false
  • English
  • Français

Phase Transformation of Co Silicidation in the Co/Ti- and Ti/Co-Si(100) Systems

Published online by Cambridge University Press:  21 February 2011

Feng Hong ,
Bijoy K. Patnaik ,
Bingzong Li ,
Ping Liu ,
Zen Sun  and
George A. Rozgonyi
Feng Hong
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
Bijoy K. Patnaik
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916 Dept. of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599-3255
Bingzong Li
Affiliation:
Dept. of Electronic Engineering, Fudan University, Shanghai, China
Ping Liu
Affiliation:
Dept. of Electronic Engineering, Fudan University, Shanghai, China
Zen Sun
Affiliation:
Dept. of Electronic Engineering, Fudan University, Shanghai, China
George A. Rozgonyi
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
Get access

Abstract

Co silicide formed via selective diffusion of Co through a Ti interfacial layer has been reported by several groups. In this report, phase identification of the silicide has been further studied for both Co/Ti and Ti/Co multi- and bilayers deposited on p(100)-Si substrates. The samples were either vacuum furnace or RTA annealed from 550°C to 900°C. The Co silicide formation sequence in the Co/Ti-Si systems follows CoSi2→Co2Si→CoSi→CoSi2 with the formation temperature increasing for each phase. The Co/Ti bilayer CoSi to CoSi2 transformation temperature was lower than that for the six layer Co/Ti system. For the multilayer sample with Co as the first layer in contact with the Si substrate, CoSi2 formed at 550°C and then CoSi was observed at higher temperatures due to the effect of Co supply on disilicide phase instability. Epitaxial CoSi2 growth occured at higher temperatures after the removal of the unreacted upper layers. A 15 μΩ-cm film resistivity was obtained from 50 nm epitaxial CoSi2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 311: Symposium O – Phase Transformations in Thin Films–Thermodynamics and Kinetics , 1993 , 305
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Osburn, C.M., Wang, Q.F., Kellam, M., Canovai, C., Smith, P.L., McGuire, G.E., Xiao, Z.G. and Rozgonyi, G.A., Appl. Surf. Sci. 53, 291(1991)Google Scholar
[2] Lawrence, M. Dass, A., Fraser, D.B., and Wei, Chih-Shih, Appl. Phys. Lett., 58(12), 1308(1991).Google Scholar
[3] Hsia, S.L., Tan, T.Y., Smith, P. and McGuire, G.E., J. Appl.Phys. 70, 7579 (1991).Google Scholar
[4] Barmak, K., Clevenger, L.A., Agnello, P.D., Ganin, E., Copel, M., Dehaven, P., Falta, J., d'Heurle, F. M. and Cabral, C. Jr., MRS Symp. Proc. 238, 575(1992).Google Scholar
[5] Hong, F., Patnaik, B. and Rozgonyi, G.A., MRS Symp. Proc. 238, 587(1992)Google Scholar
[6] Hong, F., Patnaik, B. and Rozgonyi, G.A., Appl. Phys. Lett. 61, 1519(1992)Google Scholar
[7] Hong, F., Patnaik, B. and Rozgonyi, G.A., MRS Symp. Proc. 260, 187(1992)CrossRefGoogle Scholar
[8] Hsia, S.L., Tan, T.Y., Smith, P. and McGuire, G.E., J. Appl. Phys. 72, 1864(1992).Google Scholar
[91 Hong, F., Patnaik, B., Rozgonyi, G.A., Li, B.Z., P. Liu and Sun, Z., Proc. 3rd ICSICT, 83(1992), Beijing, China Google Scholar
[10] Hong, F., Patnaik, B., Rozgonyi, G.A., Li, B. Z., Liu, P. and Sun, Z., MRS Symp. Proc. 280, (1993).Google Scholar
[11] Nicolet, M.-A. and Lau, S.S., in “VLSI Electronics: Microstructure Science”, Vol. 6, ed. Einspruch, N.G. and Larrabee, G.B., Academic Press, NY, 1983 Google Scholar
[12] Goldschmidt, H.J., Interstitial Alloys (Plenum, New York, 1967), p. 312.Google Scholar
[13] Lau, S.S., Mayer, J.W. and Tu, K.N., J. Appl. Phys. 49, 4005(1978)CrossRefGoogle Scholar
[14] Gurp, G.J. Van and Langereis, C., J. Appl. Phys. 46(10), 4301(1975).Google Scholar
[15] Xiao, Z.G., Rozgonyi, G.A., Canovai, C.A. and Osburn, C.M., J. Mater. Res. 7(2), 269(1992).Google Scholar