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Phase Separation and Atomic Ordering in Epitaxial Layers of III-V Compound Semiconductors

Published online by Cambridge University Press:  26 February 2011

S. Mahajan  and
M. A. Shahid
S. Mahajan
Affiliation:
Deptartment of Metallurgical Engineering and Materials Science, Carnegie Mellon University, Pittsburgh, PA 15213, USA.
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Abstract

MIcrostructural characteristics of phase separated and ordered ternary and quaternary layers of Ill-V compound semiconductors grown by a variety of techniques are highlighted. It is argued that the fine scale contrast modulations seen in a number of layers arise from a two-dimensional, surface spinodal decomposition at the growth temperature. On the other hand, coarse contrast modulations could result from accommodation of asymmetrical strains associated with the twodimensional decomposition.

Long range atomic order is observed in a variety of layers grown by different techniques and co-exists with phase separation. In InGaAs and InGaAsP layers, grown on (001) InP substrates, ordering is observed only on the two {111} planes that contain the line of intersection of the {111}in plane with the (001) InP surface. As a result of ordering, periodicity along the 〈111〉 direction is doubled. Also, the influence of growth temperatures and growth rates on ordering characteristics in GalnP and (Ga, Al) InP layers is reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 169
Copyright
Copyright © Materials Research Society 1989

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