Skip to main content Accessibility help
×
Home

Phase Formations in Co/Si, Co/Ge, and Co/Si1−xGex by Solid Phase Reactions

  • Z. Wang (a1), Y. L. Chen (a1), H. Ying (a1), R. J. Nemanich (a1) and D. E. Sayers (a1)...

Abstract

Phase formations in Co thin films (200Å in thickness) reacting with atomically clean Si(100), Ge(100), and Si0.80Ge0.20 epitaxial layer (800Å in thickness on Si(100) substrates) in UHV have been investigated. For the Co/Si system, it is found that CoSi (FeSi structure) is formed at 375°C through a very disordered CoSi phase, and the final CoSi2 phase is formed at 575°C. On the other hand, the Co5Ge7 phase was identified for the Co/Ge samples annealed at 300°C and 450°C and the final CoGe2 phase is formed at 600°C. For the Co/Si0.8 Ge0.20 samples annealed from 400°C to 600°C, Co(Si1−yGey) phases with y∼0.10 were detected, and for annealing at 700°C, only the CoSi2 phase was formed. These results indicate a preferential Co- Si reaction when annealing the Co/SiGe structure. It was also found that the sheet resistance of the reacted thin films depend strongly on annealing temperature.

Copyright

References

Hide All
1. Stork, J. M., Prinz, E. J., and Magee, C. W., IEEE Electron Device Lett., 12, (6), 303 (1991).
2. Garone, P. M., Venkataraman, V., and Sturm, J. C., IEDM 90, 383 (1990).
3. Arienzo, M., Comfort, J. H., Crabbe, E. F., Harame, D. L., Iyer, S. S., Meyerson, B. S., Patton, G. L., Stork, J. M. C., and Sunnin, Y. C. in Silicon Molecular Beam Epitaxy. edited by Bean, J. C., Iyer, S. S., and Wang, K. L. (Mater. Res. S°C. Pr°C. 220, Pittsburgh, PA 1991) pp. 421431.
4. Houghton, D. C., Noel, J.P., and Rowell, N. L. in Silicon Molecular Beam Epitaxy. edited by Bean, J. C., Iyer, S. S., and Wang, K. L. (Mater. Res. Soc. Proc. 220, Pittsburgh, PA 1991) pp.299320.
5. Thomas, O., D'Heurle, F.M., Delage, S., and Scilla, G., Applied Surface Science, 38, 27 (1989).
6. Hong, Q. Z. and Mayer, J. W., J. Appl. Phys. 66, 611 (1989)
7. Liou, H. K., Wu, X., and Gennser, U., Appl. Phys. Lett. 60, 577 (1992).
8. Wang, P. J., Chang, Chin-An, Meyerson, B. S., Chu, J. O., and Tejwani, M. J., Advanced Metallization and Processing for Semiconductor Devices and Circuits - II, edited by Katz, A., Murarka, S. P., Nissim, Y. I., and E, J. M.. Harper (Mater. Res. Soc. Proc. 260, Pittsburgh; PA 1992) pp. 863868.
9. Ridgway, M. C., Elliman, R. G., Hauser, N., Baribeau, J.-M., and Jackman, T. E., Advanced Metallization and Pr Cessing for Semiconductor Devices and Circuits - H, edited by Katz, A., Murarka, S. P., Nissim, Y. I., and Harper, J. M. E. (Mater. Res. Soc. Proc. 260, Pittsburgh, PA 1992) pp. 857861.
10. Hong, Y., Wang, Z., Aldrich, D., Sayers, D., and Memanich, R. J., (to be published).
11. Ottaviani, G., Tu, K. N., Psaras, P., Nobili, C., J. Appl. Phys. 62, 2290 (1987).
12. Hove, L. Van Den, Wolters, R., Maex, K., Dekeersmaecker, R., and Delerke, G., J. Vac. Sci Technol., B 4 1358 (1986).
13. Deboer, F. R., Boom, R., Mattens, W. C., Miedema, A. R., and Niessen, A. K., Eds., Cohesion in Metals: Transition Metal Alloys (North Holland, Amsterdam, 1988).

Phase Formations in Co/Si, Co/Ge, and Co/Si1−xGex by Solid Phase Reactions

  • Z. Wang (a1), Y. L. Chen (a1), H. Ying (a1), R. J. Nemanich (a1) and D. E. Sayers (a1)...

Metrics

Altmetric attention score

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed