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Phase Formation Sequence In The Pd-Gaas System

Published online by Cambridge University Press:  26 February 2011

T. Sands ,
V. G. Keramidas ,
A. J. Yu ,
K. M. Yu ,
R. Gronsky  and
J. Washburn
T. Sands
Affiliation:
Bell Communications Research, Inc., Murray Hill, NJ 07974 Center for Advanced Materials, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
V. G. Keramidas
Affiliation:
Bell Communications Research, Inc., Murray Hill, NJ 07974
A. J. Yu
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
K. M. Yu
Affiliation:
Center for Advanced Materials, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
R. Gronsky
Affiliation:
Materials and Molecular Research Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
J. Washburn
Affiliation:
Materials and Molecular Research Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
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Abstract

The morphological aspects of ternary phase formation during the Pd-GaAs reaction have been studied by application of transmission electron microscopy (TEM) and Rutherford backscattering (RBS) techniques. The TEM images show that the first product phase, “phase I”, forms during deposition of Pd onto (100) GaAs and exhibits the preferred orientation [0001]I ∼ // [011]GaAs. In the presence of unreacted Pd, the second phase, “phase II”, nucleates at large-angle grain boundaries in the phase I film as the annealing temperature increases above ∼ 250°C Energy dispersive analysis of x-rays and RBS suggest that both phases I and II have nominal compositions in the range of Pd3GaAs to Pd4GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54 , 1985 , 367
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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