Hostname: page-component-8448b6f56d-sxzjt Total loading time: 0 Render date: 2024-04-24T04:16:36.675Z Has data issue: false hasContentIssue false
  • English
  • Français

Phase Formation in Ti (Ta)-Ni and Co-Ti Films Deposited on (001)Si in N2 Atmospheres.

Published online by Cambridge University Press:  11 February 2011

A. L. Vasiliev ,
M. Aindow ,
A. G. Vasiliev ,
I. A. Horin  and
A. A. Orlikovsky
A. L. Vasiliev
Affiliation:
Department of Metallurgy and Materials Eng., Institute of Materials Science, Unit 3136, University of Connecticut, Storrs, CT 06269–3136
M. Aindow
Affiliation:
Department of Metallurgy and Materials Eng., Institute of Materials Science, Unit 3136, University of Connecticut, Storrs, CT 06269–3136
A. G. Vasiliev
Affiliation:
Institute of Physics and Technology Russian Academy of Sciences, Moscow, Russia Moscow State Institute of Radioengineering, Electronics and Automation (Technical University), Moscow, Russia.
I. A. Horin
Affiliation:
Institute of Physics and Technology Russian Academy of Sciences, Moscow, Russia
A. A. Orlikovsky
Affiliation:
Institute of Physics and Technology Russian Academy of Sciences, Moscow, Russia
Get access

Abstract

A series of electron microscopy investigations on the microstructure produced by surface-diffusion reactions between Si substrates heated to 700–800°C and Ti-Co, Ti-Ni or Ta-Ni alloys deposited in a nitrogen ambient with and without barrier layers are described. The TEM data show clear phase separation into TaSi2 and NiSi2 for the Ta-Ni film deposited in a high N2 pressure ambient. Deposition at lower N2 pressure led to the formation of a mixed Ni-Ta-Si layer. The phase separation effect was also absent for Ni-Ti films even at high N2 pressure. The presence of barrier layers strongly affected the surface diffusion reactions in the Co-Ti-Si system. Formation of Ti-(O) or CoSix amorphous layers at the Si surface prevented the interdiffusion of Si and Co, such that even pure Co or Co2Si layers could be formed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 745: Symposium N – Novel Materials and Processes for Advanced CMOS , 2002 , N4.10
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Maex, K., van Rossum, M., Properties of Metal Silicides, INSPEC, London (1995).Google Scholar
2. Inoue, K., Tung, R.T., Migagi, K., Chikaki, S., Kikkawa, T., Mat. Res. Soc. Proc., 440, 435 (1997).Google Scholar
3. Hsia, S.L., Tan, TY., Smith, P., McGuire, G.E., J. Appl. Phys. 72, 1864 (1992).Google Scholar
4. Coe, D.J. and Rhoderick, H., J. Phys. D, 9, 965 (1976).Google Scholar
5. Foll, H., Ho, P.S., Tu, K.N., Phil. Mag. A, 45, 31 (1981).Google Scholar
6. D'Heurle, F., Petersson, C.S., Slot, L., and Strizker, B., J. Appl. Phys. 53, 5678 (1982).Google Scholar
7. Iwai, H., Ohguro, T., Ohmi, S., Microelectonic Engineering, 60, 157 (2002).Google Scholar
8. Teodorescu, V., Nistor, L., Bender, H., Steegen, A., Lauwers, A., Maex, K., Van Landuyt, J., J. Appl. Phys, 90, 167 (2001).Google Scholar
9. Wang, S.Q., Raaijmakers, I.J., Burrow, B.J., Suthar, S., Redkar, S., Kim, K.-B., J. Appl. Phys, 69, 5176 (1990).Google Scholar
10. Alberti, A., Molinaro, S., La Via, F., Bongiorno, C., Ceriola, G., Ravesi, S., Microelectonic Engineering, 60, 81 (2002).Google Scholar
11. Lee, Y.-J., Suh, B.-S., Rha, S-K., Park, C.-O., Thin Solid Films, 320, 141, (1998). R.J. Gutmann,Google Scholar
12. Tu, K.N., J. Vac. Sci. Tech., 19, 766 (1981).Google Scholar
13. Falke, M., Gebhardt, B., Beddies, G., Teichert, S., Hinneberg, H.-J., Microelectonic Engineering, 55, 171 (2001).Google Scholar
14. Chamirian, O., Steegen, A., Behder, H., Lauwers, A., de Potter, M., Marabelli, F., Maex, K., Microelectonic Engineering, 60, 221 (2002).Google Scholar
15. Gromov, D.G., Mochalov, A.I., Pugachevich, V.P., Kirilenko, E.P., Trifonov, A.Y., Appl. Phys. A, 64, 517 (1997).Google Scholar
16. Ogawa, S., Lawrence, M., Dass, A., Fair, J.A., Kouzaki, T., Fraser, D.B., Mat. Res. Soc. Symp. Proc., 312, 193 (1993).Google Scholar
17. Selinder, T.I., Miller, D.J., Gray, K.E., Appl. Phys. Lett., 67, 1597 (1995).Google Scholar
18. Kim, G.B., Kwak, J.S., Baik, H K., Lee, S.M., J. Appl. Phys,. 82, 2323 (1997).Google Scholar
19. Sinclair, R., Holloway, K., Kim, K. B., Ko, D. H., Bhansali, A. S., Schwartzman, A. F. and Ogawa, S., Inst. Phys. Conf. Ser. 100, 599 (1989).Google Scholar
20. Goto, K., Fushida, A., Watanabe, J., Sukegawa, T., Kamwamura, K., Yamazaki, T., Sugui, T., IEDM Tech. Digest, 1995, 449 (1995).Google Scholar