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Periodic Arrangement of GE Islands on SI(111)

  • H. Hibino (a1), N. Shimizu (a1), Y. Shinoda (a1) and T. Ogino (a1)


We describe periodic arrangements of Ge islands grown on Si (111) using Ge deposition at room temperature and post-deposit annealing. A Mesh pattern of relaxed Ge islands is obtained under conditions of a Ge thickness of 10 Å and an annealing temperature of 400°C. The Mesh pattern is due to the preferential crystallization of α-Ge films at steps and at out-of-phase boundaries of 7×7 reconstructions. We also demonstrate that the Ge island pattern is modified when Ge is grown on a substrate changed by Si homoepitaxy or In adsorption.



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[1] Copel, M., Reuter, M. C., Kaxiras, E., and Tromp, R. M., Phys. Rev. Lett. 63, 632 (1989).
[2] Eaglesham, D. J., Unterwald, F. C., and Jacobson, D. C., Phys. Rev. Lett. 70, 966 (1993).
[3] Ishizaka, A. and Shiraki, Y., J. Electrochem. Soc. 133, 666 (1986).
[4] Gossmann, H.-J., Feldman, L. C., and Gibson, W. M., Phys. Rev. Lett. 53, 294 (1984).
[5] Marée, P. M., Nakagawa, K., Mulders, F. M., van der Veen, J. F., and Kavanagh, K. L., Surf. Sci. 191, 305 (1987).
[6] Shinoda, Y., Shimizu, N., Hibino, H., Nishioka, T., Heimlich, C., Kobayashi, Y., Ishizawa, S., Sugii, K., and Seki, M., Appl. Surf. Sci. 60/61, 112 (1992).
[7] Tanaka, H., Udagawa, M., Itoh, M., Uchiyama, T., Watanabe, Y., Yokotsuka, T., and Sumita, I., Ultramicroscopy 42–44, 864 (1992).
[8] Homma, Y. (private communication).
[9] Köhler, U., Jusko, O., Pietsch, G., Müller, B., and Henzler, M., Surf. Sci. 248, 321 (1991).
[10] Hibino, H., Shimizu, N., and Shinoda, Y., Extended abstracts of the 1993 International Conference on Solid State Devices and Materials, pp. 252.
[11] Osakabe, N., Tanishiro, Y., Yagi, K., and Honjo, G., Surf. Sci. 109, 353 (1981).
[12] Tung, R. T. and Schrey, F., Phys. Rev. Lett. 63, 1277 (1989).
[13] Köhler, U., Demuth, J. E., and Hamers, R. J., J. Vac. Sci. Technol. A 7, 2860 (1989).
[14] Nakahara, H. and Ichikawa, M., Appl. Phys. Lett. 61, 1531 (1992).
[15] Iwanari, S., Kimura, Y., and Takayanagi, K., J.Cryst. Growth 119, 241 (1992).
[16] Takaoka, K., Yoshimura, M., Yao, T., Sato, T., Sueyoshi, T., and Iwatsuki, M., Phys. Rev. B 48, 5657 (1993).
[17] van der Gon, A. W. Deiner and Tromp, R. M., Phys. Rev. Lett. 69, 3519 (1992).
[18] Endo, A. and Ino, S., Surf. Sci. 293, 165 (1993).

Periodic Arrangement of GE Islands on SI(111)

  • H. Hibino (a1), N. Shimizu (a1), Y. Shinoda (a1) and T. Ogino (a1)


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