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Performance Comparison and Design Issue on Different GaN Power Transistor Structures

  • Chwan-Ying Lee (a1), Chien-Chung Hung (a1), Wei-Hung Kuo (a1), Young-Shying Chen (a1), Lurng-Shehng Lee (a1), Cheng-Tyng Yen (a1), Suh-Fang Lin (a1), Rong Xuan (a1), Tzu-Kun Ku (a1) and Ming-Jinn Tsai (a1)...

Abstract

Three types of Ganium Nitride (GaN) transistors were studied in this work. The devices were fabricated and exhibited unique characteristics over on-state current and off-state blocking performances. We also compared the performance differences of devices fabricated by multiepitaxial GaN/AlGaN layers on different substrates (Sapphire and Si) and evaluated the correlations among starting substrate, device variation, and manufacturing uniformity. The first device is a normally-on device with Sapphire substrate which shows good drain saturation current (Idsat) and breakdown characteristics, but the gate leakage current is quite large. The second device is a normally-off GaN transistor named metal-insulate-semiconductor (MIS) heterojunction field-effect transistor (MIS-HFET) which exhibits good performance with threshold voltage (Vth) of 3V and breakdown voltage (Vbd) of over 1800V. However the third device is a normally-off GaN metal-oxide-semiconductor field-elect transistor (MOSFET) structure which is rather difficult to exhibit good blocking characteristic due to inadequate doping process control of the reduce-surface-field (RESURF) region.

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Keywords

Performance Comparison and Design Issue on Different GaN Power Transistor Structures

  • Chwan-Ying Lee (a1), Chien-Chung Hung (a1), Wei-Hung Kuo (a1), Young-Shying Chen (a1), Lurng-Shehng Lee (a1), Cheng-Tyng Yen (a1), Suh-Fang Lin (a1), Rong Xuan (a1), Tzu-Kun Ku (a1) and Ming-Jinn Tsai (a1)...

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