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Performance Advantages of Submicron Silicon-On-Insulator Devices for ULSI

Published online by Cambridge University Press:  28 February 2011

James C. Sturm
James C. Sturm*
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
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Abstract

In this paper the various performance advantages of SOI and SOS structures for submicron ULSI circuits will be described. In addition to the traditional speed and radiation-hardness advantages, there are several significant advantages of thin-film SOI compared to bulk structures for the submicron scaling of MOS transistors. These advantages include short-channel threshold voltage stability, improved sub-threshold slope, increased saturation current, and reduced hot electron effects. Both theory and data from several groups will be presented to illustrate these effects. Since these advantages all fall in areas that are critical limits to device engineering and scaling in the submicron regime, the motivation for using SOI should be even stronger as devices are scaled to smaller dimensions in the future. Consideration of SOI or SOS on the ULSI scale will require a technology capable of low defect films with a film thickness of 1000 A or less, however. The prospects for minority carrier devices such as bipolar transistors for BI-MOS will also be discussed. Both device structure (lateral vs. vertical) and material quality are issues that must be addressed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 295
Copyright
Copyright © Materials Research Society 1988

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References

1 Yau, L.D., Solid State Electronics, 17, 1059 (1974).CrossRefGoogle Scholar
2 Colinge, J.P., presented at the 1987 IEEE SOS/SOI Technology Workshop, Durango, CO, 1987.Google Scholar
3 Colinge, J.P., private communication.Google Scholar
4 Lim, H.-K. and Fossum, J.G., IEEE Trans. Electron Devices ED-30, 1244 (1983).Google Scholar
5 van Overstraeten, R.J., Declerck, G., and Brouk, G.L., IEEE Trans. Electron Devices ED-20, 1150 (1973).Google Scholar
6 Colinge, J.P., IEEE Electron Device Lett. EDL-7, 244 (1986).Google Scholar
7 Sturm, J.C., Plummer, J.D., and Gibbons, J.F., Appl. Phys. Lett. 46, 1171 (1985).Google Scholar
8 See for example, Muller, R.S. and Kamins, T.I., Device Electronics for Integrated Circuits, (John Wiley & Sons, New York, 1977), p. 356.Google Scholar
9 Lim, H.-K. and Fossum, J.G., IEEE Trans. Electron Devices ED-32, 446 (1985).Google Scholar
10 Pinto, M.R., Rafferty, C.S., and Dutton, R.W., Pisces II: Poisson and Continuity Equation Solver, Stanford Electronics Laboratories, Stanford University, 1984.Google Scholar
11 Sun, S.C. and Plummer, J.D., IEEE Trans. Electron Devices ED-27, 1497 (1980).Google Scholar
12 Vasudev, P.K., this conference.Google Scholar
13 Colinge, J.P., IEEE Trans. Electron Devices ED-34, 2173 (1987).Google Scholar
14 Sturm, J.C., Giles, M.D., Gibbons, J.F., IEEE Electron Device Lett. EDL-5, 151 (1984).Google Scholar
15 Minato, O., Masuhara, T., Sasaki, T., Sakai, Y., and Hayashida, T., ISSCC Tech. Dig. Pap., 256 (1982).Google Scholar
16 Miyamoto, J., Saitoh, S., Momose, H., Shibata, H., Kanzaki, K., and Kuhyama, S., IEDM Tech. Dig., 63 (1983).Google Scholar
17 Kroll, W.A., Buller, J.F., Rouse, G.V., and Cherney, R.D., IEEE Circuits & Devices Magazine, 2, 20 (July 1987).Google Scholar
18 Drowley, C.I. and Kamins, T.I., in Laser-Solid Interactions and Transient Thermal Processing of Materials, edited by Narayan, J., Brown, W.L., Lemons, R.A., (Elnsevier Science, New York, 1983), pp. 511–516.Google Scholar
19 Colinge, J.P., IEEE Trans. Electron Devices ED-34, 845 (1987).Google Scholar
20 Sturm, J.C., McVittie, J.P., Gibbons, J.F., and Pfeiffer, L., IEEE Electron Device Lett. EDL-8, 104 (1987).CrossRefGoogle Scholar