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A Percolative Approach to Electromigration Modelling
Published online by Cambridge University Press: 17 March 2011
Abstract
We present a stochastic model which simulates electromigration damage in metallic interconnects by biased percolation of a random resistor network. The main features of experiments including Black's law and the log-normal distribution of the times to failure are well reproduced together with compositional effects showing up in early stage measurements made on Al-0.5%Cu and Al-1%Si lines.
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- Copyright © Materials Research Society 2000
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