Skip to main content Accessibility help

PECVD of Low Dielectric Constant Fluorine-Doped SiO2 Using TICS/O2/TFAA with In-Situ Annealing

  • I. Idris (a1) and O. Sugrura (a1)


A fluorine-doped silicon dioxide (SiO2:F) film with dielectric constant as low as 3.0 was deposited by introducing trifluoroacetic anhydride ((CF3CO) 2O TFAA) into our hydrogen-free SiO2 PECVD system using tetraisocyanatesilane (Si(NCO)4 TICS) and O2. The film was deposited at 100°C and 0.5 Torr. It was annealed by in-situ, 0.2 Torr O2 plasma treatment at 400°C for 1 hour, as well as post-metallization annealing in N2 ambient at 400°C for 1 hour. The refractive index and the ratio of infrared absorbance of Si-F/Si-O-Si peak intensity were 1.37 and 11.7%, respectively. No peak related to water absorption was clearly observed in its infrared spectrum even after contact-holes opened and dipped into boiling water for 2 hours.



Hide All
1. Yoshimaru, M., Koizumi, S. and Shimokawa, K., J. Vac. Sci. Technol. A 15 p. 2908 (1997).10.1116/1.580884
2. Miyajima, H., Katsumata, R., Nakasaki, Y., Nishiyama, Y. and Hayasaka, N.: Jpn. J. Appl. Phys. 35 p. 621 (1996).
3. Tamura, T., Sakai, J., Satoh, M., Inoue, Y. and Yoshitaka, H.: Jpn. J. Appl. Phys., 36 p. 1627 (1997).10.1143/JJAP.36.1627
4. Idris, I. and Sugiura, O.: Jpn. J. Appl. Phys., 34 L772 (1995).10.1143/JJAP.34.L772
5. Idris, I. and Sugiura, O.: Jpn. J. Appl. Phys., 37 p. 6562 (1998).10.1143/JJAP.37.6562


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed