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Pattern Evolution of NiSi2 on Si Surface upon High Current Pulsed Ni Ion Implantation

Published online by Cambridge University Press:  17 March 2011

X.Q. Cheng ,
H.N. Zhu  and
B.X. Liu
X.Q. Cheng
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, CHINA
H.N. Zhu
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, CHINA
B.X. Liu
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, CHINA
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Abstract

Fractal pattern evolution of NiSi2 grains on a Si surface was induced by high current pulsed Ni ion implantation into Si wafer using metal vapor vacuum arc ion source. The fractal dimension of the patterns was found to correlate with the temperature rise of the Si substrate caused by the implanting Ni ion beam. With increasing of the substrate temperature, the fractal dimensions were determined to increase from less than 1.64, to beyond the percolation threshold of 1.88, and eventually up to 2.0, corresponding to a uniform layer with fine NiSi2 grains. The growth kinetics of the observed surface fractals was also discussed in terms of a special launching mechanism of the pulsed Ni ion beam into the Si substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 648: Symposium P – Growth, Evolution & Properties of Surfaces, Thin Films, and Self Organized Structure , 2000 , P11.29
Copyright
Copyright © Materials Research Society 2001

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