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Passivation Studies on AlGaAs Surfaces Suitable for High Power Laser Development

  • C. Edirisinghe (a1) (a2), H. E. Ruda (a1) (a2), I. Koutzarov (a1), Q. Liu (a1), L. Jedral (a1), M. G. Boudreau (a3), M. Boumerzoug (a3), J. Brown (a3), P. Mascher (a3), A. Moore (a4) and R. Henderson (a4)...

Abstract

We report on the optical characterization of sulphur (S) passivated AlxGa1−xAs/GaAs surfaces using photoluminescence (PL) and surface photovoltage (SPV) measurements. Both techniques show an enhancement in the near bandgap signal intensity, implying a reduction of the non-radiative recombination rate at the surface. To counter the instability of S-passivation, due to re-oxidation, dielectric layers of silicon nitride were deposited using electron cyclotron resonance plasma enhanced chemical vapour deposition (ECR-PECVD); the deposition of dielectric layers up to lOOnm thick does not appear to cause significant deterioration or stress at the insulator/AlGaAs interface. The dielectric layers are shown to be resistant to oxidation, and effective in maintaining the passivation effect over a period of weeks.

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Passivation Studies on AlGaAs Surfaces Suitable for High Power Laser Development

  • C. Edirisinghe (a1) (a2), H. E. Ruda (a1) (a2), I. Koutzarov (a1), Q. Liu (a1), L. Jedral (a1), M. G. Boudreau (a3), M. Boumerzoug (a3), J. Brown (a3), P. Mascher (a3), A. Moore (a4) and R. Henderson (a4)...

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