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Passivating Complexes in Cd Doped G a As and InP: Microscopic Properties and Electrical Effects

  • N. Moriya (a1), M. Deicher (a2), R. Kalish (a1), R. Keller (a2), R. Magerle (a2), W. Pfeiffer (a2), P. Pross (a2), H. Skudlik (a2), Th. Wichert (a3), H. Wolf (a3) and Isolde Collaboration (a4)...

Abstract

Perturbed Angular Correlation (PAC) and Hall measurements were used to investigate the stability of the passivating Cd-H complex in GaAs after low energy H implantation (150 eV, 1014 cm−2) at 300 K. From the observed Cd-H pair formation and reduction of hole concentration it is deduced that about 10 % of the implanted H atoms form pairs with the Cd atoms. The influence of the dopant depth profile on the apparent stability in zero bias isochronal annealing experiments is reported. After H loading a reduction of carrier mobility is observed, which is stable up to about 400 K. The formation of Cd-H pairs after low energy H implantation into InP was studied by PAC. By measuring the fraction of pairs in an isochronal annealing experiment, the stability of the pairs is deduced yielding a dissociation energy of ED = 1.8 (1) eV.

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Passivating Complexes in Cd Doped G a As and InP: Microscopic Properties and Electrical Effects

  • N. Moriya (a1), M. Deicher (a2), R. Kalish (a1), R. Keller (a2), R. Magerle (a2), W. Pfeiffer (a2), P. Pross (a2), H. Skudlik (a2), Th. Wichert (a3), H. Wolf (a3) and Isolde Collaboration (a4)...

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