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A Particular Structure of B-doped μc-Si/a-Si:H Layers on Insulator

Published online by Cambridge University Press:  28 February 2011

M. Le Berre ,
M. Lemiti ,
P. Pinard ,
E. Bustarret ,
W. Grieshaber ,
J.-C. Bruyère  and
M. Brunei
M. Le Berre
Affiliation:
LPM-INSA (URA CNRS 358), 20 AV. Einstein, 69621 Villeurbanne, France
M. Lemiti
Affiliation:
LPM-INSA (URA CNRS 358), 20 AV. Einstein, 69621 Villeurbanne, France
P. Pinard
Affiliation:
LPM-INSA (URA CNRS 358), 20 AV. Einstein, 69621 Villeurbanne, France
E. Bustarret
Affiliation:
LEPES-CNRS, 166X, 38042 Grenoble Cedex, France
W. Grieshaber
Affiliation:
LEPES-CNRS, 166X, 38042 Grenoble Cedex, France
J.-C. Bruyère
Affiliation:
LEPES-CNRS, 166X, 38042 Grenoble Cedex, France
M. Brunei
Affiliation:
Laboratoire de Cristallographie du CNRS, 166X, 38042 Grenoble Cedex, France
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Abstract

Microcrystalline films of thicknesses ranging from 0.3 to 1.1 μm have been deposited on oxidized silicon wafers by PECVD in a 50KHz capacitive discharge reactor at 450°C. Two series of films have been elaborated over a wide range of boron concentrations at the same H2:SiH4 ratio of 9:1. Cross section TEM micrographs showed the films to consist of two sublayers of distinct crystalline nature, whose relative thickness depends on the preparation conditions. With a strongly <220> textured microcrystalline structure, the overlayer snowed a columnar morphology, while the amorphous underlayer reached thicknesses of 350nm. Two additional striking features were observed by TEM: - The grains took two symmetrical orientations relative to the preferential [220] growth axis;- The interface between the amorphous and crystalline regions had a sawtooth pattern with a period around 300nm. In contrast to these microstructural results, the B-profile as measured by SIMS was found to be fiat accross the whole thickness. These local measurements are compared to the results of grazing X ray diffraction and Raman measurements. We observe and discuss a discrepancy between the X ray coherence length and the dimensions of the columns as observed by TEM. While optimized conditions lead to a vanishing amorphous sublayer, the more original features described above are tentatively interpreted taking into account the high compressive strains in the layers deposited at low plasma frequencies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 573
Copyright
Copyright © Materials Research Society 1993

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