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A PAIR-DIFFUSION MODEL FOR ARSENIC IN SILICON CONSIDERING ARSENIC DEACTTVATION-INDUCEDINTERSTITIAL-SDLICON EMISSION

Published online by Cambridge University Press:  15 February 2011

Masayuki Hiroi ,
Takeo Ikezawa ,
Masami Hane  and
Hiroshi Matsumoto
Masayuki Hiroi
Affiliation:
Microelectronics Research Laboratories, NEC Corporation, 1120, Shimokuzawa, Sagamihara Kanagawa 229–11, JAPAN, hiroi@mel.cl.nec.co.jp
Takeo Ikezawa
Affiliation:
NEC informatie systems, 1120, Shimokuzawa, Sagamihara Kanagawa 229–11, JAPAN
Masami Hane
Affiliation:
Microelectronics Research Laboratories, NEC Corporation, 1120, Shimokuzawa, Sagamihara Kanagawa 229–11, JAPAN, hiroi@mel.cl.nec.co.jp
Hiroshi Matsumoto
Affiliation:
Microelectronics Research Laboratories, NEC Corporation, 1120, Shimokuzawa, Sagamihara Kanagawa 229–11, JAPAN, hiroi@mel.cl.nec.co.jp
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Abstract

An arsenic diffusion model was proposed with the emphasis on a new deactivation process which accounts for excess interstitial silicon generation. Appropriate parameter set for the binding energies of arsenic-point defect pairs were obtained for reproducing various arsenic activation levels and interaction with boron in the case of co-diffusion. Such parameters were extracted from the data of carefully performed secondary ion mass spectroscopy with lowering the primary beam energy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 371
Copyright
Copyright © Materials Research Society 1997

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References

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