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A PAIR-DIFFUSION MODEL FOR ARSENIC IN SILICON CONSIDERING ARSENIC DEACTTVATION-INDUCEDINTERSTITIAL-SDLICON EMISSION

  • Masayuki Hiroi (a1), Takeo Ikezawa (a2), Masami Hane (a1) and Hiroshi Matsumoto (a1)

Abstract

An arsenic diffusion model was proposed with the emphasis on a new deactivation process which accounts for excess interstitial silicon generation. Appropriate parameter set for the binding energies of arsenic-point defect pairs were obtained for reproducing various arsenic activation levels and interaction with boron in the case of co-diffusion. Such parameters were extracted from the data of carefully performed secondary ion mass spectroscopy with lowering the primary beam energy.

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A PAIR-DIFFUSION MODEL FOR ARSENIC IN SILICON CONSIDERING ARSENIC DEACTTVATION-INDUCEDINTERSTITIAL-SDLICON EMISSION

  • Masayuki Hiroi (a1), Takeo Ikezawa (a2), Masami Hane (a1) and Hiroshi Matsumoto (a1)

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