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p- and n-Type Charge Transport in Field-Effect Transistors of Pristine Poly(p-Phenylenevinylene)

Published online by Cambridge University Press:  26 February 2011

Hiroshi Kayashima ,
Takeshi Yasuda ,
Katsuhiko Fujita  and
Tetsuo Tsutsui
Hiroshi Kayashima
Affiliation:
kaya1@asem.kyushu-u.ac.jp, Graduate School of Engineering Sciences, Kyushu University, Department of Applied Science for Electronics and Materials, 6-1 Kasuga-koen, Kasuga, Fukuoka, 816-8580, Japan
Takeshi Yasuda
Affiliation:
yasuda@asem.kyushu-u.ac.jp, Graduate School of Engineering Sciences, Kyushu University, Department of Applied Science for Electronics and Materials, 6-1 Kasuga-koen, Kasuga, Fukuoka, 816-8580, Japan
Katsuhiko Fujita
Affiliation:
katsuf@asem.kyushu-u.ac.jp, Graduate School of Engineering Sciences, Kyushu University, Department of Applied Science for Electronics and Materials, 6-1 Kasuga-koen, Kasuga, Fukuoka, 816-8580, Japan
Tetsuo Tsutsui
Affiliation:
tsuigz@mbox.nc.kyushu-u.ac.jp, Graduate School of Engineering Sciences, Kyushu University, Department of Applied Science for Electronics and Materials, 6-1 Kasuga-koen, Kasuga, Fukuoka, 816-8580, Japan
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Abstract

Poly(p-phenylenevinylene) (PPV) thin films were prepared by using drop casting under high gravity condition and p- and n-type PPV based field effect transistors (FET) have been fabricated. PPV FETs with gold source-drain electrodes showed the p-channel FET conduction. The FET characteristics of PPV were improved by annealing and the field-effect hole mobility was 8.8×10−4cm2V−1s−1. On the other hand, PPV FET with calcium source-drain electrodes showed the n-channel FET conduction and the field-effect electron mobility was 1.0×10−6cm2V−1s−1.

Keywords

thin filmelectrical propertiespolymer
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 965: Symposium S – Organic Electronics – Materials, Devices and Applications , 2006 , 0965-S06-11
Copyright
Copyright © Materials Research Society 2007

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References

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