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The Oxygen-Related Defect in Aluminum Nitride Ceramics: a Thermal Conduction Limiting Defect in a Technologically Important Material

Published online by Cambridge University Press:  15 February 2011

Jonathan H. Harris ,
Robert A. Youngman  and
Rudy Enck
Jonathan H. Harris
Affiliation:
Carborundum Microelectronics, 10409 South 50th Place, Phoenix, Arizona 85044
Robert A. Youngman
Affiliation:
Carborundum Microelectronics, 10409 South 50th Place, Phoenix, Arizona 85044
Rudy Enck
Affiliation:
Carborundum Microelectronics, 10409 South 50th Place, Phoenix, Arizona 85044
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Abstract

Aluminum nitride (AlN) sintered ceramics are a critical new material for electronic packaging applications, principally because of AlN's high thermal conductivity and close thermal expansion match to silicon. AlN is expected to play a key role in the next generation of high powder electronic packages, in applications ranging from high power discrete component substrates to co-fired, multilayer packages for integrated circuits. In the following paper, a detailed picture of the oxygen-related defect in AlN ceramics is presented. This impurity is of critical technological importance, because vacancies associated with oxygen severely limit thermal conduction when present in high concentrations. The results of thermal conductivity measurements, luminescence studies, optical absorption experiments, photo-induced absorption studies and electrical measurements on both ceramic and single crystal samples will be presented in order to understand the detailed nature of this defect and to model its control over a number of important technological properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 323: Symposium J – Electronic Packaging Materials Science VII , 1993 , 171
Copyright
Copyright © Materials Research Society 1994

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