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Oxygen Related Lattice Defects in Silicon: Present Status

Published online by Cambridge University Press:  03 September 2012

Hugo Bender  and
Jan Vanhellemont
Hugo Bender
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
Jan Vanhellemont
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
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Abstract

The structural characterization of the oxygen related lattice defects formed under different thermal cycling conditions is discussed. The present understanding on the nature of rod-like defects and oxide precipitates is reviewed. Attention is given to the whole lattice defect spectrum which is induced by the oxygen precipitation. The influence of carbon and dopants on the defects is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 15
Copyright
Copyright © Materials Research Society 1992

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References

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