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Oxygen Related Lattice Defects in Silicon: Present Status

  • Hugo Bender (a1) and Jan Vanhellemont (a1)

Abstract

The structural characterization of the oxygen related lattice defects formed under different thermal cycling conditions is discussed. The present understanding on the nature of rod-like defects and oxide precipitates is reviewed. Attention is given to the whole lattice defect spectrum which is induced by the oxygen precipitation. The influence of carbon and dopants on the defects is discussed.

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[1] Hu, S.M., Mat. Res. Soc. Symp. Proc. 59, 249 (1986).
[2] Bourret, A., Mat. Res. Soc. Symp. Proc. 59, 223 (1986).
[3] Newman, R. C., Mat. Res. Soc. Symp. Proc. 104, 25 (1988).
[4] Claeys, C. and Vanhellemont, J., Solid State Phenomena Vol. 6&7. 21 (1989).
[5] Lin, W., in Semiconductor Silicon 1990, eds. Huff, H.R., Barraclough, K.G. and Chikawa, J., (The Electrochem. Soc, Pennington, 1990), p. 569.
[6] Bender, H. and Vanhellemont, J., in Handbook on Semiconductors, Vol. 3, 2nd ed, ed. Mahajan, S., (North Holland, Amsterdam, 1992) in press.
[7] Bender, H., Phys. Stat. Sol. (a) 86, 245 (1984).
[8] Bergholz, W., Hutchison, J.L. and Pirouz, P., J. Appl. Phys. 58, 3419 (1985).
[9] Matsushita, Y., J. Cryst. Growth 56, 516 (1982).
[10] Livingston, F. M., Messoloras, S., Newman, R. C., Pike, B. C., Stewart, R. J., Binns, N. J., Brown, W. P. and Wilkes, J. G., J. Phys. C: Solid State Phys. 17, 6253 (1984).
[11] Newman, R. C., Claybourn, M., Kinder, S. H., Messoloras, S., Oates, A. S. and Stewart, R.J., in Semiconductor Silicon 1986, eds. Huff, H.R., Abe, T. and Kolbesen, B. (The Electrochem. Soc, Pennington, 1986), p. 76
[12] Vanhellemont, J. and Claeys, C., J. Appl. Phys. 62, 3960 (1987);
Vanhellemont, J. and Claeys, C., J. Appl. Phys. 71 1073 (1992).
[13] Tempelhoff, K., Spiegelberg, F. and Gleichmann, R., in Semiconductor Silicon 1977, eds. Huff, H. R. and Sirtl, E. (The Electrochem. Soc, Princeton, 1977), p. 585.
[14] Ponce, F. A., Yamashita, T. and Hahn, S., in Defects in Silicon, eds. Bullis, W.M. and Kimerling, L.C. (The Electrochem. Soc, Pennington, 1983), p. 105.
[15] Wada, K., Inoue, N. and Kohra, K., J. Crystal Growth 49, 749 (1980).
[16] Bourret, A., Thibault-Desseaux, J. and Seidman, D. N., J. Appl. Phys. 55, 825 (1984).
[17] Skiff, W. M., Tsai, H. L. and Carpenter, R. W., Mat. Res. Soc Symp. Proc 59, 241 (1986).
[18] Carpenter, R. W., Chan, I., Tsai, H.L., Varker, C. and Demer, L. J., 1983, Mat. Res. Soc. Symp. Proc 14, 195 (1983).
[19] Yamamoto, N., Petroff, P. M. and Patel, J. R., J. Appl. Phys. 54, 3475 (1983).
[20] Bourret, A., Inst. Phys. Conf. Ser. 87, 39 (1987).
[21] Bender, H. and Vanhellemont, J., Phys. Stat. Sol. (a) 107, 455 (1988).
[22] Reiche, M., Reichel, J. and Nitzsche, W., Phys. Stat. Sol. (a) 107, 851 (1988).
[23] Desseaux-Thibault, J., Bourret, A. and Penisson, J. M., Inst. Phys. Conf. Ser. 67, 71 (1983).
[24] Salisbury, I.G. and Loretto, M.H., Phil. Mag. A 39, 317 (1979).
[25] Tan, T. Y., Phil. Mag. A 44, 101 (1981).
[26] Tan, T. Y., Foil, H. and Hu, S. M., Phil. Mag. A 44, 127 (1981).
[27] Pirouz, P., Chaim, R., Dahmen, U. and Westmacott, K. H., Acta Metall. Mater. 38 313 (1990);
Dahmen, U., Westmacott, K.H., Pirouz, P. and Chaim, R., Acta Metall. Mater. 38 (1990);
Pirouz, P., Dahmen, U., Westmacott, K. H. and Chaim, R., Acta Metall. Mater. 38 329 (1990).
[28] Carpenter, R. W., Chen, Y. L., Kim, M. J. and Barry, J. C., Inst. Phys. Conf. Ser. 100, 543 (1989).
[29] Bronner, G. B. and Plummer, J. D., J. Appl. Phys. 61, 5286 (1987).

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