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Oxygen Related Lattice Defects in Silicon: Present Status

  • Hugo Bender (a1) and Jan Vanhellemont (a1)


The structural characterization of the oxygen related lattice defects formed under different thermal cycling conditions is discussed. The present understanding on the nature of rod-like defects and oxide precipitates is reviewed. Attention is given to the whole lattice defect spectrum which is induced by the oxygen precipitation. The influence of carbon and dopants on the defects is discussed.



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