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Oxygen Ion Implantation into Germanium

Published online by Cambridge University Press:  28 February 2011

T.P. Sjoreen ,
N.M. Ravindra ,
M.K. El-Ghor  and
D. Fathy
T.P. Sjoreen
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
N.M. Ravindra
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
M.K. El-Ghor
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
D. Fathy
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
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Abstract

Single crystal (111) and (100) Ge wafers were implanted with 16O (180 keV, 2.0 x 1018/cm2, 14–28 ¼A/cm2 ) at substrate temperatures of 250, 330, and 500°C. Implanted samples were annealed at 350, 450, 550, and 650°C for 30–90 minutes in an Ar ambient. Rutherford backscattering channeling analysis and cross-sectional transmission electron microscopy indicate that an amorphous buried layer is formed by implantation and that the overlayer contains a dense network of precipitates. Electron spin resonance measurements indicate that the layer does not contain GeO2, but rather oxygen deficient GeO2. Annealing of samples up to 550°C showed no change in the morphology, however, after annealing at 650°C the buried layer was gone and all that remained was a damaged Ge substrate with little or no oxygen. Further annealing for 60 min left nearly virgin Ge.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 137
Copyright
Copyright © Materials Research Society 1988

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References

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