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Oxygen Influence on Titanium Silicide Formation

  • G.G. Bentini (a1), M. Berti (a2), C. Cohen (a3), A.V. Drigo (a2), S. Guerri (a1), R. Nipoti (a1) and J. Siejka (a3)...

Abstract

The oxygen behaviour and its influence on the annealing properties of the TiO2/Si and Ti/TiO2/Si systems have been investigated. For the TiO2/Si system no reaction at all could be evidenced after vacuum annealing up to 900°C for 30'. In the Ti/TiO2/Si system metallic Ti reacts with the TiO2 film above 400°C and at 600°C a uniform oxygen solid solution at the solubility limit was obtained without any Si reaction. Silicide formation occurs for annealing temperatures higher than 650°C and causes oxygen expulsion from the reacted layer and consequently a rise in its concentration at the surface where Ti oxide precipitation takes place. This surface oxide layer prevents a further growth of the silicide up to 850°C. The reaction of the whole metal film is attained only by annealing at 900°C or above, when the oxide is completely reduced and an important oxygen loss takes place. A model explaining this behaviour is proposed.

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Oxygen Influence on Titanium Silicide Formation

  • G.G. Bentini (a1), M. Berti (a2), C. Cohen (a3), A.V. Drigo (a2), S. Guerri (a1), R. Nipoti (a1) and J. Siejka (a3)...

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