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Oxidation Of Si / nc-Ge / Si Heterostructures For Non Volatile Memory Applications

Published online by Cambridge University Press:  15 February 2011

M. Kanoun ,
A. Souifi ,
S. Decossas ,
C. Dubois ,
G. Bremond ,
F. Bassani ,
Y. Lim ,
A. Ronda ,
I. Berbezier  and
O. Kermarrec
...Show all authors
M. Kanoun
Affiliation:
Laboratoire de Physique de La Matière, UMR-CNRS 5511, INSA De Lyon, Bât.502, 20 Av. Albert Einstein, 69621 Villeurbanne Cedex, France.
A. Souifi
Affiliation:
Laboratoire de Physique de La Matière, UMR-CNRS 5511, INSA De Lyon, Bât.502, 20 Av. Albert Einstein, 69621 Villeurbanne Cedex, France.
S. Decossas
Affiliation:
Laboratoire de Physique de La Matière, UMR-CNRS 5511, INSA De Lyon, Bât.502, 20 Av. Albert Einstein, 69621 Villeurbanne Cedex, France.
C. Dubois
Affiliation:
Laboratoire de Physique de La Matière, UMR-CNRS 5511, INSA De Lyon, Bât.502, 20 Av. Albert Einstein, 69621 Villeurbanne Cedex, France.
G. Bremond
Affiliation:
Laboratoire de Physique de La Matière, UMR-CNRS 5511, INSA De Lyon, Bât.502, 20 Av. Albert Einstein, 69621 Villeurbanne Cedex, France.
F. Bassani
Affiliation:
Campus de Luminy, Case 913 13288 Marseille Cedex 9, France.
Y. Lim
Affiliation:
Campus de Luminy, Case 913 13288 Marseille Cedex 9, France.
A. Ronda
Affiliation:
Campus de Luminy, Case 913 13288 Marseille Cedex 9, France.
I. Berbezier
Affiliation:
Campus de Luminy, Case 913 13288 Marseille Cedex 9, France.
O. Kermarrec
Affiliation:
STmicroelectronics, 850 Rue Jean Monnet, 38926 Crolles, France.
D. Bensahel
Affiliation:
STmicroelectronics, 850 Rue Jean Monnet, 38926 Crolles, France.
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Abstract

In this work, we present an extensive study of the oxidation process of Si/Ge nanocrystals (nc-Ge)/Si samples using SIMS (Second Ion Mass Spectroscopy), Transmission Electron Micrscopy (TEM), Atomic Force Microscopy (AFM) and electrical characterization of Metal/Oxide/Semiconductor capacitors (MOS). Various samples with different oxidation times have been studied and it is demonstrated that Silicon dry oxidation kinetics is not influenced by the presence of Ge. As shown by SIMS measurements, a pure SiO2 layer is formed on the top of the structure, while the Ge atoms are intermixed with the silicon substrate. The TEM and AFM analysis show that the nc-Ge height is drastically reduced during the oxidation process. The fabrication of MOS capacitors on the structures allowed to study electron and hole trapping in the Ge dots. From our analysis we have shown that the Ge nanostructures which covered by SiO2 are not isolated from the Si substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 776: Symposium Q – Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing , 2003 , Q11.34
Copyright
Copyright © Materials Research Society 2003

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References

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