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Oxidation of Si nanocrystals fabricated by ultra-low energy ion implantation in thin SiO2 layers

Published online by Cambridge University Press:  01 February 2011

H. Coffin ,
C. Bonafos ,
S. Schamm ,
N. Cherkashin ,
M. Respaud ,
G. Ben Assayag ,
P. Dimitrakis ,
P. Normand ,
M. Tencé  and
C. Colliex
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H. Coffin
Affiliation:
CEMES-CNRS, 29 rue J. Marvig, 31055, Toulouse, France
C. Bonafos
Affiliation:
CEMES-CNRS, 29 rue J. Marvig, 31055, Toulouse, France
S. Schamm
Affiliation:
CEMES-CNRS, 29 rue J. Marvig, 31055, Toulouse, France
N. Cherkashin
Affiliation:
CEMES-CNRS, 29 rue J. Marvig, 31055, Toulouse, France Ioffe Physico-Technical Institute, Polytekhnicheskaya 26, St Petersburg, 194021, Russia
M. Respaud
Affiliation:
LNMO, INSA, Département de Physique, 135 avenue de Rangueil, 31077 Toulouse, France
G. Ben Assayag
Affiliation:
CEMES-CNRS, 29 rue J. Marvig, 31055, Toulouse, France
P. Dimitrakis
Affiliation:
Institute of Microelectronics, NCSR ‘Demokritos', 15310 Aghia Praskevi, Greece
P. Normand
Affiliation:
Institute of Microelectronics, NCSR ‘Demokritos', 15310 Aghia Praskevi, Greece
M. Tencé
Affiliation:
Laboratoire de Physique des Solides, Université Paris-Sud-UMR 8502, 91405 Orsay, France
C. Colliex
Affiliation:
Laboratoire de Physique des Solides, Université Paris-Sud-UMR 8502, 91405 Orsay, France
A. Claverie
Affiliation:
CEMES-CNRS, 29 rue J. Marvig, 31055, Toulouse, France
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Abstract

The effect of annealing in diluted oxygen on the structural characteristics of thin silicon dioxide layers with embedded Si nanocrystals fabricated by ultra-low energy ion implantation (1 keV) is reported. The nanocrystal characteristics (size, density, coverage) have been measured by spatially resolved Electron Energy Loss Spectroscopy using the spectrum-imaging mode of a Scanning Transmission Electron Microscope. Their evolution has been studied as a function of the annealing duration under N2+O2 at 900°C. An extended spherical Deal-Grove model for the self-limiting oxidation of embedded silicon nanocrystals has been carried out. It shows that stress effects, due to the deformation of the oxide, slows down the chemical oxidation rate and leads to a self-limiting oxide growth. The model predictions show a good agreement with the experimental results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 830: Symposium D – Materials and Processes for Nonvolatile Memories , 2004 , D6.6
Copyright
Copyright © Materials Research Society 2005

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References

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