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Oxidation Of AIN-Al2O3 Composite Film Prepared By Microwave Plasma CVD

  • Yoshihiro someno (a1), Makoto sasaki (a2) and Toshio Hirai (a1)

Abstract

Thermal oxidation resistance, in a temperature range of 600 to 1100° C, of AIN-Al2O3 composite, AIN and θ-A12 O3 films has been studied. The films were prepared by microwave plasma CVD using an AlBr3 -H2 -N2 -Ar gas system at a substrate temperature of 430° C. AIN-Al2O3 composite film was found to have good surface stability below an oxidaton temperature of 1100°C and to have the best properties for insulation film.

Key words: microwave plasma CVD, AIN-Al2O3 composite, passivation film, oxidation resistance, AlBr3

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Oxidation Of AIN-Al2O3 Composite Film Prepared By Microwave Plasma CVD

  • Yoshihiro someno (a1), Makoto sasaki (a2) and Toshio Hirai (a1)

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