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Outgassing of Photoresist During Ion Implantation

  • D. Roche (a1), J.F. Michaud (a1) and M. Bruel (a1)

Abstract

Outgassing of HUNT HPR 204 photoresist during ion implantation has been characterized by means of quadrupole mass analysis. The influence of the various parameters (implantation eneray, beam current, ion species) has been studied in order to point out the evolutions, in terms of time or implanted dose, of the target chamber pressure and the peaks at masses 26 and 28, characteristic of the photoresist outqassing. The pressure integral in the target chamber which is easily related to the integrated outgassing flux, has been found essentially dependent on the total energy deposited in the photoresist layer and on the ion penetration depth.

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[1] SMITH, J.C. in Ion Implantation: Equipment and Techniques (Springer, Berlin, 1983) p. 196
[2] OKUYAMA, Y., HASHIMOTO, T., KOGUCHI, T. J. Electrochem. Soc. 125, 8 (1978) 1293
[3] HANLEY, P.R. in Ion Implantation: Equipment and Techniques (Springer, Berlin, 1983) p. 2
[4] RAICU, B. ibid. p. 450
[5] CHENG, J.C., TRIPP, G.R. Solid St. Technol. 26, 11 (1983) 143
[6] STEEPLES, K. J. Vac. Sci. Technol. B2, 1 (1984) 58
[7] RYDING, G. in Ion Implantation: Equipment and Techniques (Springer, Berlin, 1983) p.274
[8] MARKET, M., CURRENT, M.I. Solid St. Technol. 26, 11 (1983) 101
[9] SMITH, B. Ion Implantation range data for silicon and germanium device technologies (1977)
[10] TENNANT, D. M. and al., J. Vac. Sci. Technol. B 3, 1 (1985) 458
[11] BIASSE, B., private communication

Outgassing of Photoresist During Ion Implantation

  • D. Roche (a1), J.F. Michaud (a1) and M. Bruel (a1)

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