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Origin of Subboundary Formation in Encapsulated Recrystallized Si Films on SiO2

Published online by Cambridge University Press:  28 February 2011

Avid Kamgar ,
S. Nakahara  and
R. V. Knoell
Avid Kamgar
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
S. Nakahara
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
R. V. Knoell
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

We have made extensive microdiffraction studies of the crystallographic orientation of recrystallized (001) Si films, and transmission electron microscopy (TEM) analysis of dislocations at the initiation sites of the subboundaries. The microdiffraction studies reveal a characteristic folding behavior between the subgrains with an increasing tilt angle in the direction away from the initiation sites. The TEM results show straight dislocations along the [110] direction initiating from the nucleation site, the appearance of curved dislocations, and buckling of the epi film around the nucleation site, all indicative of a strong bending force at the initiation site. These two predominant characterististics of the recrystallized films, i.e., (1) crystallographic orientation of the subgrains, and (2) subboundaries together with their associated defects can be successfully interpreted in terms of the model which we recently proposed for the subboundary formation.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 571
Copyright
Copyright © Materials Research Society 1987

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References

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